2008
DOI: 10.1016/j.tsf.2008.04.103
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of the ability of a silica “seed” layer to improve the thermal and aqueous immersion stability of alkylsilane monolayers on silicon oxide surfaces

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
10
0

Year Published

2008
2008
2023
2023

Publication Types

Select...
6

Relationship

3
3

Authors

Journals

citations
Cited by 7 publications
(11 citation statements)
references
References 25 publications
(36 reference statements)
1
10
0
Order By: Relevance
“…Data for clean SiO 2 is also listed for comparison. The contact angle values agree with those of other reports, , which indicates that the hydrophobic coatings of different precursors were successfully deposited on the Si wafers. No film thickness data is provided for the SiO 2 layer because it is considered as the substrate.…”
Section: Resultssupporting
confidence: 90%
“…Data for clean SiO 2 is also listed for comparison. The contact angle values agree with those of other reports, , which indicates that the hydrophobic coatings of different precursors were successfully deposited on the Si wafers. No film thickness data is provided for the SiO 2 layer because it is considered as the substrate.…”
Section: Resultssupporting
confidence: 90%
“…The relative intensities of these two peaks shows that the majority of the surface silanols that are consumed produce Si−O−Si bonds (through bridge bonding), but a small fraction of these silanol groups are converted to silanols of higher energy, which are less perturbed. Even though the vapor-deposited silica layers possess no free surface silanols, it has been demonstrated previously that they are amenable to surface modification by organosilane chemistries . Surface modification reactions by organosilicon precursors are generally described to proceed by a mechanism loosely depicted in Figure , which abounds in literature on this topic.…”
Section: Resultsmentioning
confidence: 99%
“…Samples are etched for 10 min in concentrated HF to remove the native oxide layer, rinsed in copious amounts of DI water, and then dried under a stream of nitrogen. The samples are loaded into a custom-built vacuum deposition system, which has been described previously, , for oxygen plasma treatment. A simplified schematic of the vacuum deposition system is shown in Figure A.…”
Section: Methodsmentioning
confidence: 99%
“…A silicon ATR crystal and pieces from a silicon wafer are first sonicated in acetone and isopropanol for 10 min each and then dried under a stream of nitrogen. Then the samples are cleaned by an iterative HF etch/oxygen plasma process, which is described in detail elsewhere. , This iterative cleaning method is repeated until inspection by contact angle and AFM indicate that a clean (contact angle <5°), flat (rms roughness ∼0.2 nm) surface has been obtained (on samples cut from a silicon wafer), but usually two iterations suffice. After cleaning, the ATR crystal is fitted to the experimental apparatus (schematic available in Figure ), which is then evacuated to base pressure.…”
Section: Methodsmentioning
confidence: 99%