2023
DOI: 10.1039/d2cp05366g
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Investigation of the anchoring and electrocatalytic properties of pristine and doped borophosphene for Na–S batteries

Abstract: Designing an anchoring layer on the sulfur electrode has been considered one of the effective approaches to promoting the real application of room-temperature sodium-sulfur (RT-Na-S) batteries. In this work, based...

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Cited by 7 publications
(13 citation statements)
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“…The E C of the B doped BIP is 8.61 eV per atom and E C of the N doped BIP is 8.59 eV per atom, implying that the doped substrate could maintain good energy stability. E C of the B/N doped BIP is higher than that of other 2D materials, such as N P -BP (4.87 eV per atom), C P -BP (4.86 eV per atom) 42 and P 2 C 3 (4.60 eV per atom). 43 Additionally, the B/N doped BIP has been adapted to perform the AIMD calculation for 10 ps at 350 K. As shown in Fig.…”
Section: Resultsmentioning
confidence: 78%
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“…The E C of the B doped BIP is 8.61 eV per atom and E C of the N doped BIP is 8.59 eV per atom, implying that the doped substrate could maintain good energy stability. E C of the B/N doped BIP is higher than that of other 2D materials, such as N P -BP (4.87 eV per atom), C P -BP (4.86 eV per atom) 42 and P 2 C 3 (4.60 eV per atom). 43 Additionally, the B/N doped BIP has been adapted to perform the AIMD calculation for 10 ps at 350 K. As shown in Fig.…”
Section: Resultsmentioning
confidence: 78%
“…Furthermore, a lower energy (−0.77/−1.28 eV) suggests that B/N atoms are more likely to form alternate dopants at the T 1 site, and these energies are slightly lower than those of N P -BP (0.65 eV) and C P -BP (0.63 eV). 42…”
Section: Resultsmentioning
confidence: 99%
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