Investigation of the characteristics of electroluminescent SiC diodes. II. Temperature- and growth-dependent effects

Abstract

The operation of SiC LEDs studied as a function of temperature between 245 and 400 K correlates with the p–ν junction model proposed earlier. A comparison of characteristics is made when the polytype is changed from 6H to 4H and when the quantity of tungsten in the growth region is varied. The blue‐green emission is related to the secondary diffusion effect and oxygen appears to be responsible for producing these effect in vapour epitaxy diodes.