The article describes a new method of organosilicon compounds activation by low energy electron beam for SiCN coatings deposition. The composition of the beam plasma in a hexamethyldisilazane-containing gas medium was studied, and it was shown that the precursor molecules decomposition degree increases with the beam current and nonmonotonically depends on the electron beam energy. The application of a low-energy electron beam for the plasma-chemical vapor decomposition of hexamethyldisilazane and for samples heating up by electron beam to 600°C makes it possible to obtain SiCN-based coatings with a hardness up to 18 GPa and thickness ~1 μm for 1 h.One of the ecological, effective and productive modern methods for silicon carbonitride (SiCN) coatings production is a chemical vapor deposition in organosilicon compounds (OSC) vapors medium by its decomposition in plasma (PECVD) [1]. The main factor determining the unique characteristics of SiCN-coatings (such as high hardness, oxidation resistance, chemical inertness, etc.) are the conditions of its synthesis, so the possibility of a controlled change of various processing parameters is crucial for coatings with desired properties obtaining. Usually a radio frequency discharge is used for plasma activation of the precursor vapors [2]. It is important to control the precursor molecules decomposition degree in order to facilitate the formation of films containing both Si−C and Si−N bonds and, as a result, having high mechanical characteristics. However, when using gas discharges, in fact, the only controlled parameter is the discharge current (or power). An alternative way to generate plasma is to use low-energy electron beams [3]. The advantage of this method is that in the range of electron energies 100−200 eV, which is close to the maximum of electron impact ionization cross section of gas molecules and atoms, the frequency of plasma processes increases, resulting in the formation of ionized and excited particles. In addition, an important advantage of the sources used [4] is the independent control of the emission current and electron energy, pressure and gas medium composition over a wide range, which provides flexible control of the plasma parameters. This method was not previously used for the OSC decomposition.This approach was realized in an electrode system with a two-stage source of a wide (~100 cm 2 ) low-energy electron beam based on a self-heating hollow cathode discharge (SHHC), the design of which was described in detail in [5] (Figure 1). The beam current I b was varied up to 5 A by changing the discharge current in the first stage, electron beam energy varied in the range 50−500 eV. Hexamethyldisilazane [(CH 3 ) 3 Si] 2 NH (hereinafter HMDS) was taken as an OSC precursor. The precursor vapor flow was 2 g h −1 . Argon was used as the plasma-forming gas, which flow was kept constant (40 sccm), the pressure in the chamber was 0.2−0.3 Pa.The OSC molecules decomposition process is determined both by the binding energies between the atoms in the initial mo...