Investigation of the conduction mechanism, high dielectric constant, and non-Debye-type relaxor in La0.67Ba0.25Ca0.08MnO3 manganite

Bourguiba, Marwa; Raddaoui, Z.; Dhahri, A.; Chafra, Moez; Dhahri, J.; García, María del Mar Román

doi:10.1007/s10854-020-03733-9

Cited by 14 publications

(8 citation statements)

References 42 publications

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“…Furthermore, the existence of oxygen vacancies is related to the existence of the inhomogeneous distribution in the A-site. The same results have been found as those obtained in manganites such as La 0.67 Ba 0.25 Ca 0.08 MnO 3 [27].…”

Section: Conductivitysupporting

confidence: 88%

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Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

et al. 2021

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The polycrystalline La 0.65 Ca 0.25 Sr 0.1 MnO 3 manganite was prepared by the solgel method. Structural analysis showed that our compound is single-phase and crystallizes in the orthorhombic phase with a Pnma space group. A detailed analysis of the electrical and dielectric characteristics of La 0.65 Ca 0.25 Sr 0.1 MnO 3 was carried out in the frequency and temperature range by the impedance spectroscopy technique. The electrical property of our compound as electrical conductivity dc reveals the semiconductor behaviour of our sample. At high temperatures, the transport properties of our material are dominated by a thermally activated small polaron jumping mechanism and at low temperature are dominated by a Mott-variable range hopping process. The values of the activation energy have been determined from DC conductivity and impedance, and the same type of charge carriers has been found in the relaxation process and electrical conductivity. The conduction mechanism is governed by the grain boundary. The experimental impedance data of the sample were fitted using Z-view software, to allow modelling an electrical equivalent circuit. Keywords X-ray diffraction analysis • Electrical and dielectric properties • Solgel* A. J. M. Sales

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Section: Conductivitysupporting

confidence: 88%

“…It is worth observing that the value of the activation energy is equal to 0.16 eV and is close to that deduced by DC analysis. This designates the relaxation and conduction processes can be referred to as the same type of charge carriers [45]. In Fig.…”

Section: Ac Conductivitymentioning

confidence: 99%

Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

et al. 2021

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“…So , Ea values around 0.16 eV found for conduction are very similar to these of the Ea of Vo in the perovskite type [26]. The transport mechanism can take place by a single or bipolaron hopping behavior over the barrier between the grain and grain boundary sites in the CBH model.…”

Section: (C)supporting

confidence: 73%

“…The relaxation frequency fmax changed to the higher frequency with temperature increase, confirming presence of a relaxation behavior in temperature and frequency [26]. The relaxation time is calculated according to the equation τ = 1/(2πfmax).…”

Section: Complex Impedance Analysismentioning

confidence: 79%

Hopping conduction mechanism and impedance spectroscopy analyses of La0.70Sr0.25Na0.05Mn0.70Ti0.30O3 ceramic

Raddaoui

Kossi

Brahem

et al. 2021

J Mater Sci: Mater Electron

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The perovskite sample La0.7Sr0.25Na0.05Mn0.7Ti0.3O3 (LSNM0.70T0.30) was produced via a solidstate route process. Impedance spectra of LSNM0.70T0.30 in the frequency interval [40Hz -1MHz] were studied at several temperatures [80K to 440 K]. The ac conductivity (ac) established that according to the Jonscher law. ac is described by Non-overlapping Small Polaron Tunneling model at low temperatures and Correlated Barrier Hopping model at high temperatures. From dc conductance analysis, conduction seems to be thermally activated, suggesting the existence of semiconductor process. Detailed investigation of impedance data revealed the non-Debye nature of the relaxation processes in the sample. In addition, Dielectric constant curves were applied to examine the relaxation dynamics of charge carriers. In fact, the Debye-like relaxation was performed on the basis of the polarization of spatial charges following Maxwell-Wagner model and Koop's phenomenological theory.

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“…The involved dynamical process happens to be independent of the temperature. , There is some deviation in the low-frequency region for sample B observed in the master plot, which may arise from the window effect . In addition, the full width at half-maximum (FWHM) values estimated from − Z 2 /– Z 2 max vs log( f / f max ) plots for samples A and B were approximately 1.33 and 1.81, respectively, demonstrating the diffusion of relaxation at various time invariants, and the phenomenon involved is a non-Debye mechanism …”

Section: Results and Discussionmentioning

confidence: 89%

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films

Das

Samanta

2021

ACS Appl. Electron. Mater.

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Temperature-dependent ac conductivity, impedance spectroscopy, and complex dielectric properties have been investigated on boron-doped silicon oxide (SiO X :H) films grown by radio frequency plasma-enhanced chemical vapor deposition at low temperature (∼250 °C). The two-phase characteristics, e.g., silicon nanocrystals (Si-ncs) embedded in amorphous oxide (a-SiO X :H) tissues, have been evaluated initially by structural studies and subsequently via impedance spectroscopy. Impedance spectroscopy also facilitates identifying the contribution of each individual phase (nanocrystalline and amorphous) on the electronic properties of the materials. The dependence of relaxation time on temperature obeys Arrhenius behavior and also confirms a non-Debye type response under the varying electric field. The negative temperature coefficient of resistance behavior reveals the semiconducting nature of the materials. A designed equivalent circuit model using parallel R∥CPE shows comprehensive correlation among structural, microstructural, and charge carrier characteristics. Frequency-dependent conductivity follows Jonscher’s power law non-linear fitting and reveals a less than unity magnitude of its exponent “n”. The temperature dependence of ac conductance identifies a non-overlapping small polaron tunneling mechanism prevailing in the B-doped SiO X :H network. The tunneling distance is higher in B-doped nc-SiO X :H, and it reduces faster at higher frequency in the B-doped a-SiO X :H matrix. The charge carrier density of states, N(E F), is higher in nc-SiO X :H; however, the lower N(E F) of B-doped a-SiO X :H enhances faster at elevated frequency. The frequency-dependent electrical transport in the B-doped nanocrystalline/amorphous heterostructured SiO X :H network has never been explored before.

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Investigation of the conduction mechanism, high dielectric constant, and non-Debye-type relaxor in La0.67Ba0.25Ca0.08MnO3 manganite

Cited by 14 publications

References 42 publications

Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

Hopping conduction mechanism and impedance spectroscopy analyses of La0.70Sr0.25Na0.05Mn0.70Ti0.30O3 ceramic

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films

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Investigation of the conduction mechanism, high dielectric constant, and non-Debye-type relaxor in La0.67Ba0.25Ca0.08MnO3 manganite

Cited by 14 publications

References 42 publications

Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

Microstructural properties, dielectric behaviour, conduction mechanism, impedance, and electrical modulus of La0.65Ca0.25Sr0.1MnO3 manganite

Hopping conduction mechanism and impedance spectroscopy analyses of La0.70Sr0.25Na0.05Mn0.70Ti0.30O3 ceramic

Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiOX:H Thin Films

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Complex Dielectric Characteristics, ac-Conductivity, and Impedance Spectroscopy of B-Doped nc-SiO_X:H Thin Films