2023
DOI: 10.1134/s1063782623010074
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Investigation of the Dependence of the Silicon Needle Shape on the KOH Solution Concentration during Anisotropic Wet Etching

A. V. Novak,
A. M. Sokolov,
A. V. Rumyantsev
et al.
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Cited by 2 publications
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“…Iterative cycles of deposition and selective removal of passivation layers have shown to create complex self-replicating fractal structures from (100) silicon wafers [16], and adding surfactants such as Triton-X100 to tetramethylammonium hydroxide (TMAH) have been shown to suppress etching of the (110) plane compared to the (100) making it possible to realise both circular structures [17] and inclining walls [18]. Octagonal pyramid needles based on (411) and (141) crystal planes have been made by increasing the KOH concentration beyond 70% [19], and near isotropic etch profiles in terms of high aspect nanowire columns have been achieved by letting the Si(OH) 4 etch byproduct passivate the (110) walls while etching in the (100) direction [20]. The addition of isopropyl alcohol (IPA) smoothens the etched surface of crystal planes such as the (100) by adsorbing to the surface that balances the etch rate with the absorption/desorption of reactants and products [21].…”
Section: Introductionmentioning
confidence: 99%
“…Iterative cycles of deposition and selective removal of passivation layers have shown to create complex self-replicating fractal structures from (100) silicon wafers [16], and adding surfactants such as Triton-X100 to tetramethylammonium hydroxide (TMAH) have been shown to suppress etching of the (110) plane compared to the (100) making it possible to realise both circular structures [17] and inclining walls [18]. Octagonal pyramid needles based on (411) and (141) crystal planes have been made by increasing the KOH concentration beyond 70% [19], and near isotropic etch profiles in terms of high aspect nanowire columns have been achieved by letting the Si(OH) 4 etch byproduct passivate the (110) walls while etching in the (100) direction [20]. The addition of isopropyl alcohol (IPA) smoothens the etched surface of crystal planes such as the (100) by adsorbing to the surface that balances the etch rate with the absorption/desorption of reactants and products [21].…”
Section: Introductionmentioning
confidence: 99%