2020
DOI: 10.1016/j.mtla.2020.100633
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Investigation of the early stage of reactive interdiffusion in the Cu-Al system by in-situ transmission electron microscopy

Abstract: The early stage of the reactive interdiffusion in the Cu-Al system was investigated at 350°C and 300°C thanks to in-situ transmission electron microscopy. A special care was given to find conditions where the electron beam and the sample free surface do not affect significantly the reaction. A special emphasis was then given on the influence of grain boundaries that are fast diffusion paths, and on nanoscaled particles that may interact with the transformation front. It was found that there is a transient stat… Show more

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Cited by 18 publications
(19 citation statements)
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“…A fiber texture with major <111 > and minor <001> orientations, was characterized for both phases, in agreement with the results from previous researchs on the influence of cold drawing on the texture of pure Cu [17,18] and pure Al [19]. vious papers for the same samples [14,16], in agreement with literature [21,22,23,24]. For short heat treatment conditions (300 • C during 15 min to enable the TEM observation of the IMC interface), the bright field TEM image of a 1.7 mm diameter ACCA (figure 4(a)) reveals that the AlCu layer is the thinnest one.…”
Section: Microstructural Characterizationsupporting
confidence: 89%
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“…A fiber texture with major <111 > and minor <001> orientations, was characterized for both phases, in agreement with the results from previous researchs on the influence of cold drawing on the texture of pure Cu [17,18] and pure Al [19]. vious papers for the same samples [14,16], in agreement with literature [21,22,23,24]. For short heat treatment conditions (300 • C during 15 min to enable the TEM observation of the IMC interface), the bright field TEM image of a 1.7 mm diameter ACCA (figure 4(a)) reveals that the AlCu layer is the thinnest one.…”
Section: Microstructural Characterizationsupporting
confidence: 89%
“…Figure 2(b) shows at higher magnification, in bright field STEM mode, of a typical Cu/Al interface. As reported in a previous article[16], no IMC could be detected along such an interface, except for a small fraction of nanoscaled Al 2 O 3 resulting from the cold-drawing process. The grains are mostly dislocation-free, however, few grains also exhibit dislocation walls/cells (encircled in the figure2(b)).…”
supporting
confidence: 69%
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“…Authors [16] didn't calculate diffusion activation energies and the pre-exponential factors, so we can do it using calculated data by k. p. gurov's and a. m. gusak's method or "constant flux method" [3,4,[18][19][20][21][22][23] (Table 2) and eqs. 27:…”
Section: Diffusion Activation Energy Calculation In the Cu-al Systemmentioning
confidence: 99%