Investigation of the effect of low energy ion beam irradiation on mono-layer graphene

Xu, Yi–Jun; Zhang, Kun; Brüsewitz, Christoph; Wu, Xuemei; Hofsäß, H.

doi:10.1063/1.4816715

Cited by 53 publications

(40 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[23][24][25][26] To add to the complexity of the situation, the synthesis conditions of doped graphene, which most commonly follow the chemical route, yield graphene samples of varying quality, 17 often with several types of dopant atom and defect configurations within the same specimen. [25][26][27] In a bid to produce uniformly6doped single6 layer graphene specimens, the successful implementation of low6energy ion implantation with either N or B was recently demonstrated, [28][29][30] achieving retention levels of the order of ~1% in good agreement with theoretical predictions. 31 This ion6implantation technique, commonly used by the modern semiconductor industry for doping Si wafers, for instance, has the advantage of allowing the uniform incorporation over a large area of single dopants on a pre6screened, single6layer, suspended graphene sample, and of producing comparatively few defects or ad6atom configurations.…”

mentioning

confidence: 78%

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

et al. 2015

View full text Add to dashboard Cite

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free6standing graphene through two types of single6atom doping. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 dopant atom shows an unusual broad asymmetric peak which is the result of delocalised π * states away from the B dopant. The asymmetry of the B K towards higher energies is attributed to highly6localised σ* anti6bonding states. These experimental observations are then interpreted as direct fingerprints of the expected p6 and n6type behaviour of graphene doped in this fashion, through careful comparison with density functional theory calculations. graphene, doping, electronic structure, STEM, EELS, ab5initio calculations, DFT

show abstract

mentioning

confidence: 78%

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Experimentally, various methods have been reported to reduce R C : one of the most common approaches is postmetallization annealing . Other methods aim to modify the graphene prior to metallization in a random manner, such as low power oxygen plasma etch (with or without postmetallization annealing), ozone pretreatment, intentional doping of graphene below the contact metal, and ion beam irradiation . A more deterministic approach is the formation of “edge” contacts, where the graphene under the contact is partially removed by lithographic methods to enable the formation of covalent bonds between graphene and metal.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering

Passi

Gahoi

Marín

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 Ωµm for a device with surface contacts to 456 Ωµm when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 Ωµm to 45 Ωµm, a substantial decrease of 91%. The experimental results are supported and understood via a multi-scale numerical model, based on density-functional-theory calculations and transport simulations. The data is analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices.We provide a simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering.The extraordinary electronic, optoelectronic and mechanical properties of graphene make it a promising candidate as a technology booster for micro-and nanoelectronics applications.Examples include radio frequency electronics, 1,2 integrated photodetectors, 3-5 and nanoelectromechanical systems. 6,7 One of the major bottlenecks limiting the performance of graphene-based devices is the large and varying value of specific contact resistivity (R C ) between metal contact electrodes and graphene. [8][9][10][11] When a metal is brought into contact with graphene, a junction with high contact resistivity is created, typically attributed to the low density of states (DOS) in graphene in particular when the Fermi level is near the Dirac point. 11 Although abinitio calculations provide deeper insights into the contact problem, they also highlight the importance of the metal. 12-14 Experimentally, various methods have been reported to reduce R C : one of the most common approaches is post-metallization annealing. [15][16][17] Other methods aim to modify the graphene prior to metallization in a random manner, such as low power oxygen plasma etch (with or without post-metallization annealing), 18 ozone pre-treatment, 19 intentional doping of graphene below the contact metal, 20 and ion beam irradiation. 21,22 A more deterministic approach is the formation of "edge"-contacts, where the graphene under the contact is partially removed by lithographic methods to enable the formation of covalent bonds between graphene and metal. This idea was proposed by means of an ingenious contact geometry by Wang 23 . Subsequently, the partial removal of the graphene under the contact by lithography, plasma or ion bombardment allowed a more versatile contact design. In particular, Smith et al. 24 investigated edge patterning of graphene with rectangular cuts under palladium (Pd) and copper (Cu) contacts with the transfer length method (TLM). The conclusion of this study was extended by Park et a...

show abstract

“…Conventionally, three categories of methods have been widely used to modulate the carrier type of semiconductors, some of which were already applied for the n‐doping of BP: (i) substitutional doping, including substitutional doping during growth, ion implantation, plasma treating, etc; (ii) charge transfer from an electron donor or acceptor, involving gas molecules, metal particles, organics, and oxides; (iii) field‐induced doping, which could successfully inverse the p‐type silicon to n‐type . For 2D materials, due to their stable lattice structures and absence of dangling bonds, substitutional doping has been only achieved in very few 2D semiconductor materials, such as N, B, F substitutional doping to graphene, selenium dope of black phosphorus, etc . While, the performance of the semiconductor especially its transport property employing this approach will be degraded seriously because of inevitable defects and charged impurity scattering centers .…”

Section: Introductionmentioning

confidence: 99%

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Yuan

Zhang

et al. 2017

Adv Funct Materials

Self Cite

105

View full text Add to dashboard Cite

Black phosphorus (BP) has been considered as a promising two-dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole-transport-dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong fieldinduced effect from the K + center of the silicon nitride (Si x N y ). An obvious change from pristine p-type BP to n type is observed after the deposit of the Si x N y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm 2 V -1 s -1 . Moreover, high-performance in-plane BP p-n diode and further logic inverter were realized by utilizing the n-doping approach. The BP p-n diode exhibits a high rectifying ratio of ~10 4 . And, a successful transfer of the output voltage from "High" to "Low" with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP-based nanoelectronics.

show abstract

Investigation of the effect of low energy ion beam irradiation on mono-layer graphene

Cited by 53 publications

References 52 publications

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Contact Info

Product

Resources

About