Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface

Mahaboob, Isra; Rocco, Emma; Hogan, Kasey; Meyers, Vincent; Green, R.; Nouketcha, F.; Murray, Thomas M.; Kaushik, Vishal; Lelis, Aivars J.

doi:10.1007/s11664-020-08532-w

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…This could be due to impurities in the Al2O3 or problems at the Al2O3/SiO2 interface. These properties are expected to be improved by heat treatment such as forming gas annealing (18). Evaluation of surface roughness using AFM images.…”

Section: Compositional Evaluation Of Ald Filmsmentioning

confidence: 99%

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment

Kirihara,

Yoshida,

Mikawa

et al. 2024

ECS Trans.

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Thermally oxidized SiO2/Si and GeO2/Ge are difficult to form very thin oxide films by atomic layer deposition (ALD) due to the chemical inertness of the oxide film surface. In this study, the effect of surface modification of insulating films by the UV-Ozone (UVO) method on ALD was investigated with the aim of controlling the atomic layer thickness and producing a uniform oxide film. The results show that UVO treatment can deposit atomic layer-thick films on SiO2 or GeO2 without delay. This may be due to the formation of dangling bonds on the oxide film surface, which improves the reactivity between the surface and the precursor during initial layer formation.

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Section: Compositional Evaluation Of Ald Filmsmentioning

confidence: 99%

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment

Kirihara,

Yoshida,

Mikawa

et al. 2024

ECS Trans.

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“…Over the last 3 decades, GaN has become an invaluable material for lighting and power management applications. − Much of the success enjoyed by GaN is due to the realization of p-type doping, originally by Amano et al However, despite more than 30 years of development, impurity-doped p-type III-nitrides still suffer from limited carrier concentration and low mobility. Mg, the only widely used and presently viable p-type dopant in III-N, is relatively deep, with a level at ∼160 meV from the valence band edge in GaN .…”

Section: Introductionmentioning

confidence: 99%

MOCVD Growth and Characterization of Be-Doped GaN

Reshchikov

Rocco

Meyers

et al. 2022

ACS Appl. Electron. Mater.

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Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type or semi-insulating at best. Previous reports use molecular beam epitaxy or ion implantation to dope GaN with Be, almost exclusively. Due to the high toxicity of Be organometallics, reports of GaN:Be by metal−organic chemical vapor deposition (MOCVD) have been largely absent. Here, we report a systematic study of growth of GaN:Be by MOCVD. All doped samples show the established UV band and yellow luminescence signature of GaN:Be, and growth conditions resulting in high-quality GaN with stable Be incorporation were established. Our results show that the MOCVD growth technique allows for Be incorporation pathways that have not been possible with previous growth methodologies and is highly promising in achieving p-type conductivity in GaN:Be.

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Sputter-Deposited copper iodide thin film transistors with low Operating voltage

Adamson,

Zilberberg,

Polishchuk

et al. 2024

Solid-State Electronics

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Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface

Cited by 4 publications

References 23 publications

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment

MOCVD Growth and Characterization of Be-Doped GaN

Sputter-Deposited copper iodide thin film transistors with low Operating voltage

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Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface

Cited by 4 publications

References 23 publications

Realization of Atomically Uniform ALD-Al2O3 and TiO2 on SiO2 and GeO2 by UV-Ozone Treatment

Realization of Atomically Uniform ALD-Al2O3 and TiO2 on SiO2 and GeO2 by UV-Ozone Treatment

MOCVD Growth and Characterization of Be-Doped GaN

Sputter-Deposited copper iodide thin film transistors with low Operating voltage

Contact Info

Product

Resources

About

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment

Realization of Atomically Uniform ALD-Al₂O₃ and TiO₂ on SiO₂ and GeO₂ by UV-Ozone Treatment