Investigation of the electron beam induced transformation of Cu 3 N-films

Lesch, Norbert; Karduck, Peter; Cremer, R.; Richthofen, Alexander von

doi:10.1007/s002160050964

Cited by 9 publications

(13 citation statements)

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“…The mass flow of water was usually kept at 20 sccm. Different NH 3 partial pressures were obtained by varying the NH 3 /Ar mass flow ratio, while keeping the total flow of NH 3 and Ar constant at 40 sccm. The total flow in the reactor was typically 155 sccm.…”

Section: Methodsmentioning

confidence: 99%

“…It is a metastable semiconductor and decomposes easily on heating or on ion, electron or laser beam irradiation, which can be used for patterning of structures [1][2][3]. It has been fabricated with different techniques like molecular beam epitaxy [4], pulsed laser deposition [5], atomic layer deposition [6] and reactive magnetron sputtering [7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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Phase stability and oxygen doping in the Cu–N–O system

Fallberg

Ottosson

Carlsson

2010

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Phase stability and oxygen doping in the Cu–N–O system

Fallberg

Ottosson

Carlsson

2010

Journal of Crystal Growth

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“…Notably, the thermal decomposition of Cu 3 N also brings about a remarkable change in its optical properties, which also provides the possibility of being used in write-once optical recording applications [3][4][5]. Towards these aims, Cu dots arrays or lines have been fabricated via local decomposition of copper nitride by several researchers [1][2][3][4][5][6][7], but the preparation of stoichiometric copper nitride films remains an essential issue to be resolved.…”

Section: Introductionmentioning

confidence: 99%

“…Since its first synthesis by Juza and Hahn [8], a variety of methods [1][2][3][5][6][7][8][9][10][11][12][13][14][15][16][17] have been employed in the growth of copper nitride, mostly in the form of thin films; and many experimental data have been established for this material. However, the physical properties of the copper nitride films reported in literature are inconsistent.…”

Section: Introductionmentioning

confidence: 99%

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Huang

et al. 2006

Journal of Crystal Growth

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“…The thermal instability of copper nitride is detrimental for both the sample preparation and the characterization of its physical proprieties. Since its first synthesis by Juza et al in 1939 5, a multiplicity of methods have been employed in growing copper nitride, mostly in the form of thin films 4, 6–17. The physical properties of copper nitride films reported in the literature are quite inconsistent, however.…”

Section: Introductionmentioning

confidence: 99%

Crystalline thin films of stoichiometric Cu₃N and intercalated Cu₃NM_x (M = metals): Growth and physical properties

Gao

et al. 2010

Physica Status Solidi (a)

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The growth of stoichiometric samples of thermally unstable noble‐metal nitrides remains a challenge. Thin films of nearly stoichiometric Cu3N have been successfully grown on Si (100) wafers by reactive magnetron sputtering of Cu target with mixed nitrogen and argon. The controversies regarding bandgap, lattice constant, decomposition temperature, room‐temperature electrical resistivity, etc., can be resolved. Nitrogen re‐emission leads to the formation of Cu3N nanocrystallites, generally 40–60 nm in size, enclosed by Cu‐terminated {111} facets. Samples with a slight Cu excess may turn into a metallic conductor with excellent electrical conductivity via a percolation mechanism. Unfavorable growth conditions may give rise to blistering or even mesocaled fivefold symmetrical relief structures in the deposit. These structures result from the rearrangement of nanocrystals via gliding along the {111} facets. Ternary Cu3NMx (M = Pd, Cu, In, Zn, etc.) compounds, with the excessive metal atoms occupying the cell centers of the Cu3N lattice, can be obtained by cosputtering under similar conditions. Such ternary compounds can easily be made metallic. In Cu3NPd0.238 a constant electrical resistivity was measured in a temperature range ∼200 K. Incorporation of In or O atoms may raise the decomposition temperature but not to more than 400 °C if the decomposition products are required to be as good a conductor as Cu. The present results might be relevant for growing films of thermally unstable materials. The peculiar electrical conduction behavior in the Cu3NMx structures is expected to inspire the search for nearly zero‐band materials similar to Cu3NPd0.238 as well as to promote an indepth exploration of potential applications of these materials.

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Investigation of the electron beam induced transformation of Cu 3 N-films

Cited by 9 publications

References 0 publications

Phase stability and oxygen doping in the Cu–N–O system

Phase stability and oxygen doping in the Cu–N–O system

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Crystalline thin films of stoichiometric Cu₃N and intercalated Cu₃NM_x (M = metals): Growth and physical properties

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Investigation of the electron beam induced transformation of Cu 3 N-films

Cited by 9 publications

References 0 publications

Phase stability and oxygen doping in the Cu–N–O system

Phase stability and oxygen doping in the Cu–N–O system

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties

Contact Info

Product

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Crystalline thin films of stoichiometric Cu₃N and intercalated Cu₃NM_x (M = metals): Growth and physical properties