2008
DOI: 10.1134/s0021364008190028
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Investigation of the emission of photons induced in the volume reflection of 10-GeV positrons in a bent silicon single crystal

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Cited by 13 publications
(9 citation statements)
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“…It should be noted that the considered pair production process in bent crystals analyzed in this paper is similar to the process of radiation emission of over-barrier positrons (electrons) experimentally investigated in [2,3]. The comparison with the theoretical predictions in that case was satisfactory.…”
Section: Discussionsupporting
confidence: 71%
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“…It should be noted that the considered pair production process in bent crystals analyzed in this paper is similar to the process of radiation emission of over-barrier positrons (electrons) experimentally investigated in [2,3]. The comparison with the theoretical predictions in that case was satisfactory.…”
Section: Discussionsupporting
confidence: 71%
“…In recent years several experiments studying different processes of charged particle interaction with bent single crystals were performed [1][2][3]. In particular, the process of radiation emission of ultrarelativistic electrons and positrons moving in the planar fields of a bent single crystal was investigated.…”
Section: Introductionmentioning
confidence: 99%
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“…A theoretical description of this radiation process can be found in the papers [10][11][12]. The first experiment to detect such radiation was performed at electron energy of 10 GeV [13] and showed satisfactory agreement with the calculations. Then, measurements of the radiation with volume reflection in silicon crystals at energies 180 [14] and 120 [15] GeV were performed.…”
Section: Introductionmentioning
confidence: 84%
“…In the last decade, channeling and the related effects have been investigated in bent crystals, mostly for beam steering for applications in collimation and extraction in hadronic accelerators [9,10,11,12,13,14]. Recently, such investigations were extended to the cases of electrons and positrons [15,16,17,18,19,20,21,22], for which the processes of radiation emission are modified by the presence of the crystal curvature.…”
Section: Introductionmentioning
confidence: 99%