Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations
Arghyadeep Sarkar
Abstract:In this study, we examined the gate leakage characteristics of normally off pGaN/AlGaN/GaN HEMTs through a simulation study. The Fowler Nordheim Tunneling (FNT) mechanism mainly contributes to the gate leakage process as indicated by the TCAD simulation. However, at low bias, the FNT undercalculates the leakage current since the electric field is low in this region. This extra leakage current component at this low bias region can be attributed to the presence of surface traps. Trap-assisted tunneling current a… Show more
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