Investigation of the Graphoanalytical Method of Determining the Standard W-Parameters of the Four-Pole

Abstract

The level of social and economic development of modern society is determined by the volume, speed and quality of information processing by methods and technical means. Measurement and information processing systems are becoming an integral part of production automation. The development of radio electronics is inextricably linked with the development of measurements, and the state of modern radio electronics is largely determined by the level of development of measurement methods and the availability of sufficiently advanced measuring equipment to measure the parameters of radio-electronic devices, in particular transistors, allows: first, exploitation; second, to provide the source material for calculating the devices; third, to judge their internal properties and technological features in an average way; fourth, to design new, high-quality devices. The intensification and automation of the processes of production, complication and expansion of the front of scientific experiments entails the need to develop fundamentally new methods and means of measuring transistor parameters based on new algorithms and computers. Increasing the level of semiconductor devices, improving their performance, will inevitably affect potential stability over a wide frequency range. Classical methods and standard measuring equipment are not designed to measure the parameters of potentially unstable transistors. The measurement systems are uncontrollably excited, which increases the measurement error. Therefore, the current task is to measure the parameters of both transistors in particular and quadruplets in general, in the frequency range of potential instability. The clock speed at which modern computer technology operates is very close to the microwave range (ultra high frequencies), which makes the problem of measuring and calculating various functional units of computers and operating elements quite relevant. The development of new methods and means for measuring the parameters of potentially unstable quadruplets in the microwave range is an important scientific area, which can significantly improve the accuracy of their measurement on standard equipment. Improving the performance of the microwave range devices can be achieved both through the use of a fundamentally new element base and through the use of new circuit designs. Promising in this regard is the direction of using the reactive properties of transistors, as well as transistor structures with a negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range. The graphical methods for determining the parameters of an equivalent four-pole according to the measurement results are, as a rule, much more convenient than analytical ones. Having a mathematical equation and its graphical interpretation, it is relatively easy to determine the required quantities by solving graphical techniques. There are several ways of graphically depicting the relationships that characterize the impedance (conductivity). The following two are the most convenient: 1) pie chart of total resistance in rectangular coordinates [1]; 2) circular diagram of the total resistance in polar coordinates, proposed for the first time by Soviet scientist AR Volpert [2].