Investigation of the I–V characteristics of n+/n homojunctions introduced by heavy ion irradiation in CdZnTe crystals

Liang, Lu; Wang, Aoqiu; Wang, Ying‐Ming; Qin, Zhentao; Qin, Chi; Shang, Rongjin; Jiang, K.; Cao, Yuwei; Xu, Lingyan; Wang, Jie

doi:10.1039/d2ce01449a

Cited by 3 publications

(1 citation statement)

References 45 publications

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“…Besides, the slightly larger barrier height in the P-N HJ device than that of the P-P HJ device should be attributed to a larger internal electric field and a larger turn-on voltage (V 0 ) due to the presence of two opposite electrical charges in the P-N HJ device. Another reason for the partially lower barrier height in the P-P HJ compared to the P-N HJ device may be that image force lowering [40] is more dominant in this device. Apart from all these, if we look at the rectification rates given in table 1, the higher the RR, the better the quality of the device.…”

Section: Resultsmentioning

confidence: 98%

An experimental study for thermal sensing applications of PP and PN heterojunctions fabricated in the same architecture and under the same conditions

Gümüs¹,

Aydoğan²

2023

J. Phys. D: Appl. Phys.

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In this research, Ni/p-GO@Fe3O4/p-Si (P–P) and Ni/ p-GO@Fe3O4/n-Si (P–N) heterojunctions (HJs) were constructed under the same conditions. Current–voltage (I–V) measurements of devices over a wide temperature range were investigated. Thermionic emission theory was used to evaluate the temperature-dependent I–V characteristics. The ideality factor (n), barrier height (Φ), rectification ratio (RR) and turn-on voltage (V 0), which are the main HJ parameters of the HJs, were determined as a function of temperature and it was seen that all parameters were dependent on temperature. The n, RR, and V 0 values for both devices decreased with increasing temperature, while Φ increased. This was attributed to the inhomogeneity between p-GO@Fe3O4 and Si. The thermal sensitivity (S) and activation energy of both devices were calculated and it was seen that S decreased linearly with increasing current. Furthermore, the highest sensitivity and the lowest activation energy values were determined as 1.35 mV K−1 and 0.79 eV, respectively for P–P HJ. These values were calculated as 0.97 mV K−1 and 0.66 eV for P–N HJ, respectively.

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Section: Resultsmentioning

confidence: 98%