Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

Abstract

In this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC1D simulation software. Simulation shows that the range of 500-700 nm would be suitable for designing an ARC. Designing a single-layer silicon nitride (Si 3 N 4) ARC for 600 nm wavelength and with a thickness of 74.257 nm, a silicon solar cell with 20.35% efficiency has been simulated. Very closely followed by a 20.34% efficient silicon solar cell with 74.87 nm thick zinc oxide (ZnO) ARC layer. Significant increase in efficiency has been observed by applying ARC in respect to not applying any kind of ARC. After efficient solar cell modeling, optimum efficiency of 20.67% is being achieved by using SiO 2 surface passivation and Si 3 N 4 ARC layer. The effects on voltage, current, photovoltaic efficiency, reflectivity and external quantum efficiency due to ARCs are also represented in this work.

Hydrophilic Antireflection and Antidust Silica Coatings

“…This increase is due to the reduction in light refection (i.e., increase of photon absorption). 44 In general, the front ARC layer in solar cells plays simultaneously the role of an optical window layer and an antireflection coating. Hence, it is highly required to develop such an oxide layer with low (ideally zero) light absorption and displaying a refractive index close to the symmetrical mean of those of silicon and air.…”

“…This value was reported as an initial starting value for antireflection coating. 44 Furthermore, a set of thicknesses between 20 and 200 nm was launched to optimize the ARC layer thickness. It is worth pointing out that an optimum thickness of the ARC layer is essential to maximize the absorbed light.…”

“…It is worth pointing out that an optimum thickness of the ARC layer is essential to maximize the absorbed light. Hashmi et al 44 has reported 100 nm thick silica as the optimum ARC layer, which is in close agreement with our reported value.…”

“…The reason for such an efficiency increase is the reduction in light reflection. 44 Such results keep the option of further performance improvement through fine-tuning of the ARC layer. As calculated, adding an oxygen-rich r(O 2 ) = 25% AR layer shows an improved photoconversion efficiency (PCE) of up to 27%, as shown in Figure 12d.…”

Optical properties of electrochemically etched N-type silicon wafers for solar cell applications

“…The results published by G. Hashmi et al compare the influence of different ARC on the silicon reflectivity, from the above studies, the most significant reduction in reflectivity is observed for Si 3 N 4 ARC with a thickness of ∼ 74 nm. The silicon reflectivity using Si 3 N 4 ARC before surface passivation is below 10 % in the wavelength range from 475 (2.61 eV) to ∼ 875 nm (1.42 eV) [2].…”