Investigation of the Influence of Cleanliness of the Substrate Surface on Formation and Transformation of the Silicon-Germanium Nanoclusters

Представлены экспериментальные результаты влияния исходного буферного слоя на поверхности подложки и среды процесса на возможность и особенности формирования нанокластеров Si1 – xGex (Si, Ge и SiGe). Предложен механизм формирования кремниевых, германиевых и кремний-германиевых нанокластеров (НК) на буферных слоях аморфного кремния, нитрида кремния и оксидов кремния, диспрозия и иттрия. Показано влияние исходного буферного слоя на поверхности подложек в условиях технологического процесса осаждения пленок наноструктурированного кремния, легированного германием (НСК(Ge)), на конфигурацию, размеры и поверхностную концентрацию НК.

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Investigation of the Influence of Cleanliness of the Substrate Surface on Formation and Transformation of the Silicon-Germanium Nanoclusters

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STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE

STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE

Исследование влияния буферного слоя на поверхности подложки и среды процесса на особенности формирования нанокластеров в структуре Si<sub>1 – x</sub>Ge<sub>x</sub>

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