Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Fagerlind, Martin; Allerstam, Fredrik; Sveinbjörnsson, Einar Ö.; Rorsman, Niklas; Kakanakova‐Georgieva, Anelia; Lundskog, Anders; Forsberg, Urban; Janzén, Erik

doi:10.1063/1.3428442

Cited by 95 publications

(69 citation statements)

References 22 publications

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“…In the MOS-AlGaN/GaN systems, it is rather difficult to apply Terman method 20 to the interface state characterization, because we cannot determine one surface potential in the MOS-HEMT structures having two interfaces from one gate capacitance value. Fagerlind et al 21 utilized the frequency dispersion characteristics of the C-V curves in the positive bias range for estimating interface state densities. They evaluated the MIS interface state densities near the conduction-band edge for SiN/AlGaN/AlN/GaN structures.…”

Section: B Effect Of Mos Interface States In C-v Measurementsmentioning

confidence: 99%

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Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Hori¹,

Yatabe²,

Hashizume³

2013

Journal of Applied Physics

155

120

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We have investigated the relationship between improved electrical properties of Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al 2 O 3 /AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al 2 O 3 /AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N 2 O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al 2 O 3 insulator. As compared to the sample without the treatment, the N 2 O-radical treated Al 2 O 3 /AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al 2 O 3 /AlGaN interface were estimated to be 1 Â 10 12 cm À2 eV À1 or less around the midgap and 8 Â 10 12 cm À2 eV À1 near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 C. Results presented in this paper indicated that the N 2 O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al 2 O 3 /AlGaN/GaN MOS-HEMTs. V C 2013 AIP Publishing LLC. [http://dx

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Section: B Effect Of Mos Interface States In C-v Measurementsmentioning

confidence: 99%

“…21 E AVG is the average energy between E 1 and E 2 , as described by Eq. (5) Although we have to assume a value of r in E 1 (as suggested in Eq.…”

Section: Frequency Dispersion C-v Characteristicsmentioning

confidence: 99%

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Hori¹,

Yatabe²,

Hashizume³

2013

Journal of Applied Physics

155

120

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“…Consequently, in the studies and modeling of the operation of IG-type GaN-based HEMTs, the capture cross section values typical for the SiO 2 /Si interface or bulk defect levels are often inadequately assumed. [18][19][20][21][22][23] The aim of the present work is the determination and analysis of the electron capture cross sections (r) of interface states at dielectric/III-N heterojunction interfaces using a newly developed photo-electric method. This method is based on the measurement of the threshold voltage shift (᭝V th ) in a capacitance-voltage (C-V) characteristics before and after illumination using photon energies (E ph ) less than the band gap (E g ) at high temperature (T).…”

Section: Introductionmentioning

confidence: 99%

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Matys

Stoklas

Kuzmı́k

et al. 2016

Journal of Applied Physics

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Articles you may be interested inWe performed, for the first time, quantitative characterization of electron capture cross sections r of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al 2 O 3 , SiO 2 , or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al 2 O 3 /InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that r for all these structures lies in the range between 5 Â 10 À19 and 10 À16 cm 2 . Furthermore, we revealed that r for dielectric/ Al x Ga 1Àx N interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing.

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“…4 Silicon nitride (Si 3 N 4 ) is currently the standard for passivation of GaN surfaces because it readily forms an interface to GaN with good electrical properties. 5,6 Unfortunately, the band offset of silicon nitride on GaN is relatively small due to its modest band gap (5 eV), so the barrier to tunneling between the gate and channel is insufficient to significantly reduce leakage current when silicon nitride is used as a gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

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A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al 2 O 3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Cited by 95 publications

References 22 publications

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

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