Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

“…While the apparent shapes of the PL spectra appear to be structured with few luminescence bands, the peak energy corresponded to that of b-FeSi 2 , reported by Hunt et al [3] and Martinelli et al [4]. The PL intensity increased with post-annealing time.…”

“…The a-FeSi 2 is a metallic phase that is thermally stable above 937 8C, and b-FeSi 2 is a semiconducting silicide. The photoluminescence (PL) at 1.55 mm from semiconducting b-FeSi 2 has attracted interest for silicon-based optoelectronic applications [1] and has been reported in various reports [2][3][4]. Moreover, its high optical absorption coefficient (higher than 10 5 cm À1 above 1.0 eV) can be advantage of using in photovoltaic devices [5].…”

Photoluminescent iron disilicide on modified Si surface by using silver

“…The apparent shape of the PL spectrum could be roughly divided into three bands labeled as A (at 0.80 7 eV), B (at 0.87 0 eV), and C (at 0.76 5 eV) as shown in the figure. Peak energy of the Aband has been reported to correspond to that of β-FeSi 2 by Hunt et al, 3) and Martinelli et al 4) Moreover, the A-band has been identified to be mainly due to a radiative recombination in β-FeSi 2 because when the apparent peak energy (E p ) of the A-band is plotted as a function of the excitation power in Fig. 5(b), the E p of the A-band is independent of excitation power.…”

“…Emissions at 1.54 µm from semiconducting β-FeSi 2 have focused a great deal of attention on silicon-based optoelectronic applications, 1) and these have been reported in various articles. [2][3][4] Previous reports have pointed out that postannealing is a key factor in enhancing the intensity of photoluminescence (PL) and electroluminescence (EL). [5][6][7][8] They have indicated that enhanced luminescence due to postannealing can be attributed to the decreasing the nonradiative recombination centers in β-FeSi 2 crystal, e.g., Si vacancies in β-FeSi 2 , 6) and of non-radiative recombination centers at the β-FeSi 2 =Si interface.…”

Luminescent iron disilicide film growth by metal–organic chemical vapor deposition

“…[1][2][3][4][5] β-FeSi 2 can be epitaxially grown on a Si substrate, irrespective of the complicated crystal structure of the orthorhombic symmetry. 6) It emits light of 1.55 μm, suitable for silica optical fiber communications, [7][8][9] and an emission efficiency of about 0.1% has been reported on the light-emitting diodes using β-FeSi 2 active-layer. 9) Previous reports have proposed post-annealing as a key factor in enhancing the intensity of photoluminescence (PL) and electroluminescence (EL).…”