Investigation of the optical spectra of crystals containing Mn2+ ions

Sviridov, D. T.; Sviridova, R. K.; Kulik, N. I.; Glasko, V. B.

doi:10.1007/bf00604777

Cited by 14 publications

(28 citation statements)

References 3 publications

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“…We concluded that observed narrow PL line is caused by 2 E → 4 A 2 radiation transition in Cr 3+ ions which replace Al 3+ ions of lattice [1][2][3][4][5][12][13][14][15][16]. Peak position of this narrow line is the same as the peak position of the line in the PL spectra of sapphire doped with Cr 3+ ions, (ruby) (R-line luminescence).…”

Section: Discussionmentioning

confidence: 78%

“…PL spectra of transition elements such as Ti 3+ , V 3+ , Mn 4+ and Mn 2+ are located in this region [1,3,15,[22][23][24]. PL spectra of V 3+ and Mn 4+ ions usually represented by relatively narrow bands and PL band of Mn 2+ ions in octahedral oxygen surround lies in the shorter wave length region (600-650 nm) [1,3,14]. Ti 3+ ions in sapphire crystal are characterized by similar wide band of PL [2][3][4].…”

Section: Discussionmentioning

confidence: 99%

“…4 T 2 level that is located above 2 E level has significant electron population only when temperature is much higher then room temperature [1][2][3][4][5].…”

Section: Discussionmentioning

confidence: 99%

“…1 Introduction Un-doped sapphire or single crystal aluminum oxide has long been known as an excellent material for optical and laser application [1][2][3][4][5]. Recently, sapphire found its application in nuclei technology, X-ray radiometry and doped sapphire is a likely material to be used as optical storage media [6][7][8].…”

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confidence: 99%

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Luminescence study of grown sapphire: from starting material to single crystal

Mogilevsky¹,

Nedilko

Sharafutdinova³

et al. 2009

Phys. Status Solidi (c)

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The results of a systematic study of photoluminescence (PL) properties of un‐doped sapphire crystals grown using different starting materials on various crystal growth methods (CZ, EFG, HDSM, Kyropoulus, HEM) are presented. Narrow line of emission has been attributed to radiation transition in Cr3+ ions (R‐line), while the nature of red wide band (RWB) of emission (600‐850 nm) is still under question. Integral intensities of R‐line and RWB were analyzed and their dependences on type of starting raw materials and of the method of crystal growth were shown. The crystals grown using Vernuil starting material exhibited significant PL in all utilized methods. On the contrary, sapphire samples grown by the same technologies wherein EMT HPDAR (High Purity Densified Alumina) was the starting material revealed much lower PL. HPDAR is produced by EMT, Inc. with proprietary and patented technology. The concentrations of various metal impurities such as Ca, Mg, Zn, Cu, Cr, Fe, Ni, H were measured. Effect of these impurities on luminescence intensity and especially the role of hydrogen incorporated into sapphire lattice are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Discussionmentioning

confidence: 78%

Section: Discussionmentioning

confidence: 99%

“…4 T 2 level that is located above 2 E level has significant electron population only when temperature is much higher then room temperature [1][2][3][4][5].…”

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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Luminescence study of grown sapphire: from starting material to single crystal

Mogilevsky¹,

Nedilko

Sharafutdinova³

et al. 2009

Phys. Status Solidi (c)

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“…The non-zero parameters ',AtM (M = 0, 1, 2) are given in Table 2. If one uses the data in Table 2, Eqns (14) and (20) and conditions of orthogonality for D-functions," the validity of Eqns (21) and (22) can be shown : Taking into account what has been said above, the rotational operators RQr*6K from Eqn (10) can be written in the symmetrized form…”

Section: Ymentioning

confidence: 99%

Calculation of the vibration–rotation line intensities in the Raman spectra of gases

Cheglokov

Ulenikov

Cherepanov

et al. 1988

J Raman Spectroscopy

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The method of irreducible tensorial sets is used for deriving general formulae describing the intensities of vibrationrotation Raman lines of molecules of different symmetries. Using this method, generalization of the parameters characterizing isotropic, anisotropic and antisymmetric scattering. taking into account vibratiowrotation interactions, has been carried out. The effect of vibration-rotation interactions on the Raman scattering cross-section is considered. IISTRODUCTION-A general formalism for the calculation of the Raman inlensities of vibration-rotation lines (scattering crosssections) of gases, including different intramolecular interactions, is described.The intensity of the i + j vibration-rotation molecular transition is known to be determined by the square of the matrix element (i I C I j) of the scattering tensor C for both spontaneous Raman scattering (see, e.g., Refs 1-5), and coherent anti-Stokes Raman scattering (Refs 6 and 7 and references cited therein), or resonance RamanIn the formulae for line intensities, in addition to the matrix elements (il C l j ) , some thermodynamic parameters (e.g. temperature and pressure) and parameters characterizing intramolecular states (e.g. energy, line centres and partition function) are involved. However, it is the calculation of the scattering-tensor matrix elements which is a matter of greater difficulty, because the eigenfunctions 1 i), l j ) of the molecular vibration-rotation Hamiltonian should be known for such calculations (for the vibrationrotation molecular Hamiltonian see, e.g., Refs 11-13).The effect of vibration-rotation interactions on the Raman scattering line intensities of different polyatomic molecules has been considered previously in a number of papers. A comprehensive review of these papers was given by Brodersen.' In the same paper,' general formulae for precise calculation of the matrix elements (i 1 M l j ) have been discussed for different types of polyatomic molecules. In this case M is a polarizability tensor; 1 i:> are the eigenfunctions of the molecular vibrationratation Hamiltonian: aR ' are the vibrational functions describing the system of non-interacting harmonic oscillators : I Jmk) are the rotational symmetric-top eigenfunctions; A : , , , are the expansion coefficients. These coefficients could be determined by, for example, diagonalization of the H-Hamiltonian matrix constructed on functions 16) I Jmk). However, because of the infinite dimension of the matrix, this problem cannot be solved. It would be possible to use perturbation theory for determining the coefficients However, even the use of this theory does not improve the situation, since one needs to know the parameters of the initial Hamiltonian (in particular, the parameters of the intramolecular potential function, or the parameters describing different electronic states). Therefore, in Ref. 5 and the papers listed there, not exact [Eqn (l)] but approximate functions of the form are used for analysing and calculating matrix elements of the polarizability tenso...

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