In this study, a
sapphire substrate with a patterned concave structure
was used to prepare ZnO film/A-B glue, and the ZnO film/A-B glue with
a patterned convex matrix was transferred onto a silicon wafer using
the lift-off technology as the seed layer. Then, the hydrothermal
method with different Zn(CH
3
COO)
2
and C
6
H
12
N
4
concentrations as precursors was
used to synthesize ZnO nanoflower arrays on the patterned convex ZnO
seed layer. XRD pattern, FESEM, FIB, and photoluminescence (PL) spectrometry
were employed to observe and analyze the properties of the synthesized
ZnO nanoflower arrays. When Zn(CH
3
COO)
2
and
C
6
H
12
N
4
concentrations were 0.01,
0.02, 0.03, and 0.04 M, the average heights of the ZnO nanorods in
the ZnO nanoflower arrays were 993, 1500, 1550, and 1650 nm, the average
diameters of the ZnO nanorods were 50, 90, 105, and 225 nm, and the
aspect ratios (
H
/
D
) of the ZnO nanorods
were 19.9, 16.7, 14.8, and 7.33, respectively. A simple statistical
and analytical method was investigated to estimate the densities (number
of nanorods) of the ZnO nanoflower arrays in one 1 μm ×
1 μm area. The total surface area (
S
) of the
ZnO nanoflower arrays first increased from 5.05 × 10
6
and then reached a maximum value of 1.20 × 10
7
nm
2
as Zn(CH
3
COO)
2
and C
6
H
12
N
4
concentrations increased from 0.01 to 0.02
M. For the systhesized ZnO nanoflower arrays, as the Zn(CH
3
COO)
2
and C
6
H
12
N
4
concentrations
increased from 0.01 to 0.04 M, their total volume (
V
) increased from the 6.23 × 10
7
to 5.90 × 10
8
nm
3
and the
S
/
V
ratio decreased from 8.10 × 10
–2
to 1.84
× 10
–2
. We found that ZnO nanoflower arrays
with Zn(CH
3
COO)
2
and C
6
H
12
N
4
concentrations of 0.2 M presented the maximum PL emission
intensities. The calculated
S
/
V
ratios
and X-ray photoelectron spectroscopy analyses are used to discuss
the reasons for these results.