Investigation of the Performance of CIS Photovoltaic Modules under Different Environmental Conditions

Kandil, Kandil M.; Altouq, Majida S.; Al-asaad, A.M.; Alshamari, L. M.; Kadad, Ibrahim M.; Ghoneim, Adel A.

doi:10.4236/sgre.2011.24043

Cited by 23 publications

(15 citation statements)

References 25 publications

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“…The localized defect regions have a larger concentration of traps. When the solar cell is illuminated, the traps are filled and this of course result in increase of leakage current, which means the change in R sh , as seen in Figure b. In addition to these, the current flow patterns and the charge carrier density as well as the imposed voltage distributions under illumination and in the dark conditions are different from each other, which means different series resistance under these two conditions.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Guller

Peksu

Karaağaç

2017

Physica Status Solidi (a)

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TiO2 nanorods (NRs) are successfully synthesized on fluorine‐doped tin‐oxide pre‐coated glass substrates via hydrothermal technique. The effect of growth parameters on morphology of the synthesized NRs is investigated in detail. The results revealed that critical values for temperature, growth‐time, acidity, and precursor concentration are required for the synthesis of well‐aligned TiO2 NRs. Following the optimization of growth parameters, the well‐oriented TiO2 NRS are decorated with a thin‐sputtered layer of CdTe (CdCl2‐treated) to form a third generation inorganic‐sensitized solar cell. The power conversion efficiency associated with the constructed solar cell is found to be 0.42%, which is exactly 3.5 times larger than that obtained for the non‐CdCl2‐treated device structure. As a second part of this study, a Schottky‐type Ag/TiO2 UV‐photodetector is fabricated, which exhibited a drastic increase in photocurrent under UV‐light exposure, with a responsivity of ∼3 A W−1 for 380 nm at −1 V.

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Section: Resultsmentioning

confidence: 99%

Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Guller

Peksu

Karaağaç

2017

Physica Status Solidi (a)

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“…The detailed analysis of the generated currents from the CIS module has shown that at low and medium temperatures CIS current ranges at values close to the nominal with a positive short circuit current temperature coefficient 0.15%/ 0 C. This coefficient is equal to the I sc temperature coefficient which can be calculated in Ref [13] for temperatures between 20 and 40 0 C. However over the whole range of working temperature this coefficient remains approximately constant with a slight tendency to decrease. A negative temperature coefficient of the short circuit current is indicated in ref [14].…”

Section: Figure 2 Variation Of the Short Circuit Current Of The Studmentioning

confidence: 85%

Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules

Perraki¹

2013

IJRSE

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An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions. The current-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 38 0). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0 C and 60 0 C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50 o C reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.

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“…These include: amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIS or CIGS), dye sensitized solar cells (DSC) and other organic solar cells. Thin film solar cells compared to other solar cells have the highest efficiency of about 12-20% based on Cu (InGa)Se 2 [5].…”

Section: Choice Of Photovoltaic Modulementioning

confidence: 98%

“…Thin film technology offers a number of advantages. Its test sequence for the design qualification and type approval is described in IEC 61646 [5].…”

Section: Introductionmentioning

confidence: 99%

Estimation of maximum power generated from CIGS photovoltaic modules under non-uniform conditions

Olanipekun¹,

Munda²,

Chen³

et al. 2014

ijsgce

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Cu(In,Ga)Se 2 (CIGS) thin-film photovoltaic (PV) module by investigating the effect of the number of input variables on the estimated accuracy. The neural network structure used is based on using cell temperature and irradiation and two electrical parameters; the open circuit voltage and the short circuit current of the CIGS thin film PV module as its inputs with the predicted maximum power generation as its output. The proposed method uses the manufacturer's data of the single junction CIGS thin film PV module NWCIGS-96. From the simulation results using ANN tools the average values for coefficient of determination (R 2 ) = 0.8882, correlation coefficient (CC) = 0.9424, relative mean square error (RMSE) = 22.9034 and mean absolute error (MAE) = 19.0016

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Investigation of the Performance of CIS Photovoltaic Modules under Different Environmental Conditions

Abstract: This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS)photovoltaic

Cited by 23 publications

References 25 publications

Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules

Estimation of maximum power generated from CIGS photovoltaic modules under non-uniform conditions

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Investigation of the Performance of CIS Photovoltaic Modules under Different Environmental Conditions

Abstract: This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS)photovoltaic

Cited by 23 publications

References 25 publications

Synthesis of TiO2 Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Synthesis of TiO2 Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules

Estimation of maximum power generated from CIGS photovoltaic modules under non-uniform conditions

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Product

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Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells

Synthesis of TiO₂ Nanorods for Schottky‐Type UV‐Photodetectors and Third‐Generation Solar Cells