Investigation of the plasma treatment in a multistep TiN MOCVD process

Riedel, Stephan; Schulz, Stefan E.; Geßner, Thomas

doi:10.1016/s0167-9317(99)00324-x

Cited by 15 publications

(7 citation statements)

References 2 publications

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“…(7) However, due to the low resultant film density and high carbon and oxygen content, additional plasma treatment on the deposited film is usually performed. (124) 1.1 Ti ALD…”

Section: Titanium and Titanium Nitridementioning

confidence: 99%

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Kim

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

545

388

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Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of thin metal/nitrides films has increased only recently. This is driven by the need for highly conformal nano-scale thin films in modern semiconductor device manufacturing technology. ALD is a very promising deposition technique with the ability to produce thin films with excellent conformality and compositional control with atomic scale dimensions. However, the application of ALD to metals and nitrides in real semiconductor device processes requires a deeper understanding about the underlying deposition process as well as the physical and electrical properties of the deposited films. This paper reviews the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication.

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“…(7) However, due to the low resultant film density and high carbon and oxygen content, additional plasma treatment on the deposited film is usually performed. (124) 1.1 Ti ALD…”

Section: Titanium and Titanium Nitridementioning

confidence: 99%

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Kim

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

545

388

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“…One TiN deposition cycle includes 5 s barrier deposition and 30 s plasma treatment. The process is described particularly in [3,4]. The number of cycles determines the barrier thickness.…”

Section: Methodsmentioning

confidence: 99%

“…In this case the barrier integrity at the sidewalls of the structures is important because of two facts: (1) The plasma treatment after a barrier deposition cycle [3,4], which should result in a density increase of the deposited barrier layer, is less effective at the sidewalls of the patterned structures. So there might be a higher probability of copper indiffusion; (2) For the formation of the barrier at the porous sidewall dry etch and photoresist strip has an impact on the low-k dielectric.…”

Section: Introductionmentioning

confidence: 99%

Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials

Bonitz

Schulz

Geßner

2004

Microelectronic Engineering

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“…r The plasma treatment time will affect the film compression, the sheet resistance, the separation of undesirable chemical components and thus the stress. 5 Thus, an increased plasma treatment time is necessary for higher film thicknesses in order to extract any r The power affects the excitation of the reactants in the plasma. r The plasma gas ratio hydrogen to nitrogen affects the distribution of material components.…”

Section: Film Deposition Parameters and Design Of Experiment-depo-mentioning

confidence: 99%

Optimization of a TiN PE-MOCVD Process Using DoE Methodology

Geringswald¹,

Hintze²,

Ernst³

2017

ECS J. Solid State Sci. Technol.

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The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). This process reaches its limits in case of very high aspect ratios. However, it is an unsolved question to what extent PE-MOCVD can achieve results with an modified process using Design of Experiment (DoE) methodology. In this context, this work addresses the characterization of a PE-MOCVD of titanium nitride (TiN). Based on the current state of the art, selected responses and factors are considered of the plasma treatment step. The derived process for unstructured wafers is feasible for the stress or for the resistivity. A uniform filling inside a structure with high aspect ratio include for a process temperature of 400°C increase in number of cycles, plasma power, plasma gas ratio hydrogen to nitrogen and plasma treatment time. At lower process temperatures and a significantly increased number of cycles a structure filling is achieved with much less titanium nitride. In contrast to the current process configuration, the deposited titanium nitride film is more uniform inside the entire test structure. Consequently, this paper provides approaches to use the PE-MOCVD for structures with increasing aspect ratios.

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Investigation of the plasma treatment in a multistep TiN MOCVD process

Cited by 15 publications

References 2 publications

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials

Optimization of a TiN PE-MOCVD Process Using DoE Methodology

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