Investigation of the relation between photoluminescence intensity and decay time reduction with plasmon effect in InGaAs quantum dots

Influence of precursor ratio and dopant concentration on the structure and optical properties of Cu-doped ZnCdSe-alloyed quantum dots

“…Fig.8shows the PL decay kinetics of Zn 0.5 Cd 0.5 Se:Cu (y%, y ¼ 0, 1, 3, 10) alloy QDs excited at 488 nm.The PL lifetime provides useful information to investigate the PL mechanism because the different PL decay lifetimes may result from different electron-hole recombination mechanisms 45. As reported earlier for semiconductor QDs, the PL lifetime of excitonic emission as well as the surface trap emission fall on the order of 1 and 10 nanoseconds (ns), respectively 46,47. Aer the incorporation of the dopant, an additional energy state will be added by the dopant, which enhances the excited state lifetime.…”

“…45 As reported earlier for semiconductor QDs, the PL lifetime of excitonic emission as well as the surface trap emission fall on the order of 1 and 10 nanoseconds (ns), respectively. 46,47 Aer the incorporation of the dopant, an additional energy state will be added by the dopant, which enhances the excited state lifetime. The spectra reveal that the ternary QDs decay faster than the doped QDs and obey a multiexponential function.…”