Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis

Kashiwa, Keisuke; Yao, K.L.; Yano, Hiroshi; Iwamuro, Noriyuki; Harada, Shinsuke

doi:10.1109/ispsd49238.2022.9813534

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis

Cited by 3 publications

References 6 publications

Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters

Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters

A Modeling Method of SiC-MOSFET Short-circuit Failure Based on COMSOL Multiphysics and Simulink Co-simulation

Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress

Contact Info

Product

Resources

About