Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

Takakura, Kenichiro; Funasaki, Suguru; Tsunoda, Isao; Ohyama, H.; Takeuchi, Daisuke; Nakashima, T.; Shibuya, M.; Murakami, Katsuya; Simoen, Eddy; Claeys, Cor

doi:10.1016/j.physb.2011.08.061

Cited by 25 publications

(9 citation statements)

References 12 publications

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“…The XPS peaks of Ga, O, and N are determined and indicated in the figure. All of the peaks of the elements are marked and shown in detail. , The composition of the GaO x N y film was simulated from XPS quantification. As seen in Figure b, the content of Ga decreased slightly as the O 2 ratio increased.…”

Section: Results and Discussionmentioning

confidence: 99%

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Yang

et al. 2019

Chem. Mater.

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This study provided a novel method for depositing high-quality GaO x N y film by plasma-enhanced atomic layer deposition (ALD). To obtain a uniform nitrogen and oxygen composition, O2 and NH3 were led into the ALD chamber at the same time. It was found that the growth rate, composition, and optical properties of the GaO x N y film could be precisely controlled by adjusting the O2:NH3 ratio. The energy band gap was well tuned from 3.46 to 4.78 eV with increased O2 ratios. The detailed analysis of the X-ray photoelectron spectra proved the existence of Ga–O, Ga–N, and N–Ga–O bonds in prepared GaO x N y film. The surface, interface, and construction of the GaO x N y films were different with GaN and Ga2O3 films through transmission electron microscope characterization. Then a possible growth mechanism was demonstrated based on these findings. The energy band structure of all GaO x N y films deposited in this study was obtained from a detailed analysis of the valence band spectra. Importantly, the GaO x N y was found to exhibit lower leakage current and higher breakdown voltage than both GaN and Ga2O3. These findings offered a foundation and proved this material will present brilliant application prospects in photodetection, photoelectrochemical water splitting, and high-voltage devices.

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Section: Results and Discussionmentioning

confidence: 99%

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Yang

et al. 2019

Chem. Mater.

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“…High quality, large diameter bulk crystals and epitaxial layers of Ga 2 O 3 are already available, with a range of controllable n-type doping levels. [6][7][8][9][10][11] Its large direct bandgap of ∼4.9 eV produces a very high theoretical breakdown electric field (∼8 MV/cm). The Baliga figure-of-merit for power electronics, 12 which involves carrier mobility, critical electric field and breakdown voltage, is almost four times higher for Ga 2 O 3 than for GaN.…”

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confidence: 99%

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga₂O₃

Ahn

Ren

Yuan

et al. 2017

ECS J. Solid State Sci. Technol.

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Schottky diodes were formed on bulk or epitaxial β-Ga2O3 using Ni/Au or Pt/Au and the electrical characteristics measured as a function of temperature in the range 25–200°C. The barrier heights were 1.07 eV (Ni/Au) and 1.04 eV (Pt/Au) at 25°C. The barrier heights increased with temperature, while the on-state resistances (RON) decreased over the same range. The temperature coefficient of reverse breakdown voltage (VB), β, was −4 mV/K for Ni/Au and −0.1 mV/K for Pt/Au. The figure-of-merit (VB2/RON) was above 3 MW.cm−2 at 25°C for Ni/Au diodes and was still ∼1 MW.cm−2 at 200°C. The reverse recovery times were also measured as a function of temperature and were of the order of 21–28 ns over the range 25–150°C for both epi and bulk diodes. The results show the already high quality of bulk and epitaxial β-Ga2O3 and the potential of this material for high temperature power electronics.

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“…The calibration is based on C 1s emission lines. Figure a shows the full spectrum of the XPS scan, with the peaks for all elements marked and identified . The O 1s and Ga 2p peaks were analyzed in detail.…”

Section: Resultsmentioning

confidence: 94%

“…Figure 5a shows the full spectrum of the XPS scan, with the peaks for all elements marked and identified. 40 The O 1s and Ga 2p peaks were analyzed in detail. As shown in Figures 5b and 5c, the peak intensities of the O 1s peak and Ga 2p peak first increased and then decreased with the increase in annealing temperature.…”

Section: Composition and Band Structure Analysismentioning

confidence: 99%

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga₂O₃ Film Grown by Plasma-Enhanced Atomic Layer Deposition

Chen

et al. 2023

J. Phys. Chem. C

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In this paper, high-quality β-Ga2O3 films were grown on silicon substrates by plasma-enhanced atomic layer deposition (PEALD). Effects of annealing temperature on β-Ga2O3 thin films were studied. Atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray reflection (XRR), and ultraviolet (UV) emission spectroscopy were used to systematically characterize Ga2O3 thin films. AFM test results showed that as annealing temperature increased from 500 to 900 °C, the roughness of film increased from 0.542 to 1.58 nm. XPS test results showed that the concentration of oxygen vacancies in annealed films was significantly reduced. After annealing, the energy band of the film increased from 4.73 to 5.01 eV, and the valence band maximum (VBM) increased from 2.58 to 2.67 eV, indicating that the annealing treatment under a nitrogen atmosphere can improve the quality of films. Results demonstrate that high-quality Ga2O3 films can be obtained by the annealing process after atomic layer deposition (ALD). The proposed method can realize an ideal stoichiometric ratio of the Ga2O3 thin film as well as precise control of its optical, electrical, and microstructural properties. This work lays the foundation for future application of Ga2O3 materials in photoelectric detection, power devices, transparent electronics, and other fields.

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Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

Cited by 25 publications

References 12 publications

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga₂O₃

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga₂O₃ Film Grown by Plasma-Enhanced Atomic Layer Deposition

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Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

Cited by 25 publications

References 12 publications

Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

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Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga₂O₃

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga₂O₃ Film Grown by Plasma-Enhanced Atomic Layer Deposition