2017
DOI: 10.1007/s10854-017-7266-y
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Investigation of the some physical properties of Ge-doped ZnO thin films deposited by thermionic vacuum arc technique

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Cited by 11 publications
(2 citation statements)
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“…The selection of the physical parameters of the Zn 1Àx Ge x O (ZGO) buffer layer represents the most critical aspect of our model. Indeed, experimental data is only available for the ternary compound Zn 2 GeO 4 and very few papers focus on other Zn/Ge ratios [41][42][43][44]. In order to simulate the solar cell structure, an estimation of the bandgap energy E g , of the electron affinity x and of the permittivity e r are done through a linear interpolation over the whole composition range between the physical parameters of zinc oxide and germanium oxide using the following equations:…”
Section: Physical Parameters Of the Buffer Layermentioning
confidence: 99%
“…The selection of the physical parameters of the Zn 1Àx Ge x O (ZGO) buffer layer represents the most critical aspect of our model. Indeed, experimental data is only available for the ternary compound Zn 2 GeO 4 and very few papers focus on other Zn/Ge ratios [41][42][43][44]. In order to simulate the solar cell structure, an estimation of the bandgap energy E g , of the electron affinity x and of the permittivity e r are done through a linear interpolation over the whole composition range between the physical parameters of zinc oxide and germanium oxide using the following equations:…”
Section: Physical Parameters Of the Buffer Layermentioning
confidence: 99%
“…Due to the optical and electrical applications, usually, the substrates were glass and PET. The effect of Ge doping on the structural, morphological and optical properties of ZnO:Ge films was studied in [184]. The average crystallite size in the 60-80 nm thick films varied between 11 nm and 30 nm for both substrates; film roughness was greater on PET substrate.…”
Section: Deposition Of the Semiconductorsmentioning
confidence: 99%