Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates

Genath, Hannah; Norberg, Jenny; Wolpensinger, Bettina; Osten, H. J.

doi:10.1016/j.tsf.2022.139561

Cited by 2 publications

(2 citation statements)

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“…Figure 9 shows the dependence of the germanium film thickness in the moment of transition from the 7 × 7 superstructure to the 5 × 5 superstructure on the temperature of the Si(111) substrate in the range up to 650 • C. As the germanium epitaxial growth temperature rises, the adatom free path increases and the probability of Ge incorporation at the edges of the steps increases, since there is a deeper potential well for atoms there [36]. The stresses in the system relax due to phase transitions of the 7 × 7 to 5 × 5 superstructure [34,60]. The method of reflection high-energy electron diffraction at the temperatures above 450 • C showed no transition to island growth.…”

Section: Resultsmentioning

confidence: 99%

“…As the germanium epitaxial growth temperature rises, the adatom free path increases and the probability of Ge incorporation at the edges of the steps increases, since there is a deeper potential well for atoms there [ 36 ]. The stresses in the system relax due to phase transitions of the 7 × 7 to 5 × 5 superstructure [ 34 , 60 ]. The method of reflection high-energy electron diffraction at the temperatures above 450 °C showed no transition to island growth.…”

Section: Resultsmentioning

confidence: 99%

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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

et al. 2023

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This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

et al. 2023

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Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)

Genath,

Schubert,

Yamtomo

et al. 2024

Journal of Applied Physics

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This study explores the growth and structural characteristics of Nd2O3 layers on virtual germanium-rich SiGe substrates on Si(111). We focus on the emergence of the hexagonal phase depending on the stoichiometry of the virtual substrate. X-ray diffraction measurements reveal a hexagonal phase when Nd2O3 is grown directly on Si(111), while growth on Ge leads to a cubic oxide structure. On SiGe layers, the growth of the oxide results in a mixed phase containing hexagonal and cubic regions, regardless of the Ge content. The cubic structure grown on virtual Ge substrates exhibits strong tensile strain, while layers grown on SiGe layers show no strain. In situ growth control via electron diffraction shows a dependence of the oxide structure of the surface reconstruction of the virtual substrate. Growth on a 7×7 reconstruction leads to hexagonal parts on Si-based substrates, while growth on c(2×8) results in cubic oxide growth on Ge. Furthermore, oxide layers grown on virtual SiGe substrates form an interfacial silicate layer. The thickness of the interfacial layer is influenced by the Si content and the structure of the oxide layer enabling oxygen diffusion pathways.

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Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates

Cited by 2 publications

References 52 publications

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)

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