2022
DOI: 10.1109/tnano.2022.3179329
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Investigation of the Thermal Transport Properties Across Van der Waals Interfaces of 2D Materials

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Cited by 4 publications
(4 citation statements)
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“…However, the heterostructure of h-BN thin and catalytic substrates cannot satisfy the needs of various novel device integration. Combining the film with the target substrate by direct growth or transfer, such as GaN 9 , SiO 2 10 , diamond 11 , etc., is more conducive to exploring the performance potential of more new optical and power electronic devices. Among them, the h-BN/diamond heterostructure interfacial coupling electronic properties have attracted a lot of research.…”
Section: Introductionmentioning
confidence: 99%
“…However, the heterostructure of h-BN thin and catalytic substrates cannot satisfy the needs of various novel device integration. Combining the film with the target substrate by direct growth or transfer, such as GaN 9 , SiO 2 10 , diamond 11 , etc., is more conducive to exploring the performance potential of more new optical and power electronic devices. Among them, the h-BN/diamond heterostructure interfacial coupling electronic properties have attracted a lot of research.…”
Section: Introductionmentioning
confidence: 99%
“…Other synthesis methods, including metal–organic chemical vapor deposition (MOCVD), have greater applicability for microelectronics, where they can be used in large-area batch fabrication. Understanding the thermal behavior of 2D TMDs fabricated from MOCVD is thus critical for understanding how the material will behave in real application settings under thermal loads. For example, controlled strain engineering utilizing thermal mismatch with a substrate can further enhance electronic and mechanical properties. ,, Furthermore, thermal management design considerations are critical for future 2D TMD-based devices because localized heat generation can lead to device degradation or delamination …”
mentioning
confidence: 99%
“…23,38,39 Furthermore, thermal management design considerations are critical for future 2D TMD-based devices because localized heat generation can lead to device degradation or delamination. 40 Lack of spatial resolution in common temperature measurements and inconsistency in nanoscale thermometry have limited the characterization of thermomechanical properties for 2D TMDs. Several techniques have been proposed to address these inconsistencies and include Raman spectroscopy, synchrotron scattering, electron energy loss spectroscopy (EELS), transmission electron microscopy (TEM), and atomic force microscopy (AFM).…”
mentioning
confidence: 99%
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