Physica B: Condensed Matter
 2003
DOI: 10.1016/j.physb.2003.07.002
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Investigation of thermal donors in Czochralski silicon annealed at 450°C under high pressure of 1GPa

Jia‐Zhuang Xu
1
,
Deren Yang
2
,
Duanlin Que
3
et al.
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