Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Chand, Umesh; Huang, Kuan Chang; Huang, Cecilia; Ho, Chia Hua; Lin, Chu‐Hsing; Tseng, Tseung‐Yuen

doi:10.1063/1.4921182

Cited by 43 publications

(20 citation statements)

References 29 publications

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“…Based on the phenomena described above, the resistive switching behaviors are agreement with conductive filament model very well. Generally speaking, there are metal CF 27,35-37 and oxygen vacancy CF [38][39][40] in the binary oxide dielectric such as HfO 2 film. Many studies have been reported that active electrodes such as Ag 4,41 and Cu [35][36][37] tends to migrate and form CF connecting with counter electrodes, playing an important role in resistive switching process.…”

Section: Resultsmentioning

confidence: 99%

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

et al. 2016

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One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.

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Section: Resultsmentioning

confidence: 99%

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

et al. 2016

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“…HfO 2-x also shows excellent performance in the applications of band width [32] and resistance range [30]. The retention of the HfO 2-x system at high temperature [33] and low temperature [34] has also been verified. Chand et al designed a structure of the Ti/Al 2 O 3 /TiO 2 /TiN device by inserting an Al 2 O 3 layer between the Ti top electrode and HfO 2-x layer and conducting high-temperature vacuum annealing and postmetal annealing treatments for achieving the thermal stability and reliability [33].…”

Section: Introductionmentioning

confidence: 74%

“…The retention of the HfO 2-x system at high temperature [33] and low temperature [34] has also been verified. Chand et al designed a structure of the Ti/Al 2 O 3 /TiO 2 /TiN device by inserting an Al 2 O 3 layer between the Ti top electrode and HfO 2-x layer and conducting high-temperature vacuum annealing and postmetal annealing treatments for achieving the thermal stability and reliability [33]. On the other hand, Fang et al adopted a Pt/HfO x /TiN structure to stabilize the performance of RRAM in low temperature [34].…”

Section: Introductionmentioning

confidence: 75%

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Guo

Zeng

2019

Journal of Nanomaterials

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Switching between high resistance states and low resistance states in a resistive random access memory device mainly depends on the formation and fracture of conductive filaments. However, the randomness of the conductive filament growth and the potential breakdown of the large voltage in the forming process will lead to unstable resistive switching and memory performance. We studied the possible natural forming process of conductive filaments for intrinsic defects under the influence of top electrode material based on the structure of W/HfO2-x/Pt. Such a simple device shows long retention time and great endurance cycles. The dendritic oxygen vacancy (VO) conductive filament model was constructed, and the dynamic VO migration under directional external bias was described according to the characteristic electrical performance. In addition, we also explored the relationship between the multilevel resistance and the evolution of a dendritic VO conductive filament, signifying the potential application of multilevel storage in the future. Furthermore, a Ag/HfO2-x/Ag selector was fabricated to assemble the memory device in wire connection which exhibits the potential of eliminating leaky current in the memory array. The connection also indicates that the fabrication process of the 1S1R structure can be simplified by using the same functional layer.

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“…Among them, metal-oxide-based resistive switching memories such as HfO 2 have proven to have the best resistive switching performances in terms of, e.g., endurance, retention, and variability. Excellent resistive switching has been reported when using metal bottom electrodes [18,19]. HfO 2 -based resistive switching memory with ITO electrode can also be used for flexible and transparent electronic devices [20].…”

Section: Introductionmentioning

confidence: 99%

Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

Ryu

Kim

2020

Nanomaterials

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In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO2/Si3N4/SiO2) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching and synaptic behaviors were improved by inserting a Si3N4 layer between the HfO2 and SiO2 layers. The electric field within SiO2 was mitigated, thus reducing the current overshoot in the trilayer device. The reset current was considerably reduced in the trilayer device compared to the bilayer device without a Si3N4 layer. Moreover, the nonlinear characteristics in the low-resistance state are helpful for implementing high-density memory. The higher array size in the trilayer device was verified by cross-point array simulation. Finally, the multiple conductance adjustment was demonstrated in the trilayer device by controlling the gradual set and reset switching behavior.

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Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Cited by 43 publications

References 29 publications

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

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