Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy

Hofman, D.; Kleint, Ch.; Thomas, Jürgen; Wetzig, K.

doi:10.1016/s0304-3991(99)00181-3

Cited by 5 publications

(6 citation statements)

References 11 publications

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“…They showed that the growth of TiO 2 crystalline particles in the amorphous matrix is diffusion-limited and decreases with decreasing TiO 2 content. There also have been several reports on the formation of various nanocrystals such as Si 41 and metal silicides 33,34,42,43 in an amorphous matrix. Since these types of reactions are a diffusion-controlled process, in order to obtain a higher degree of crystallinity, longer annealing time and higher temperature are required.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

et al. 2013

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Composite nanostrucutres of TiSi 2 O x coated nitrogen-doped carbon nanotubes (NCNTs) were synthesized by a combination of chemical vapor deposition (CVD) and magnetron sputtering processes. The synthesized nanostructures were used as supports for Pt catalyst for oxygen reduction reaction (ORR) in proton exchange memberane fuel cells (PEMFCs). An amorphous layer of TiSi 2 O x with controlled thicknesses was sputtered on NCNTs and followed by post-treatment at high temperature (1000°C, An-TiSi 2 O x -NCNTs), inducing TiO 2 nanoparticles of around 5 nm in diameter embedded in the amorphous layer. Further analyses via X-ray absorption spectroscopy of the Ti K edge and Si K edge revealed the Ti atoms were in a TiO 2 rutile environment and the Si atoms were in a SiO 2 environment. Pt nanoparticles with an average diameter of 3 nm were deposited on the composite support, and their electrochemical behaviors toward ORR were studied. It was revealed that, even with lower electrochemical surface area (ECSA), Pt/An-TiSi 2 O x -NCNTs showed better catalytic activity toward ORR than Pt/NCNT catalysts. The origin of enhanced activity of Pt/An-TiSi 2 O x -NCNTs was examined by high resolution transmission electron microscopy (HRTEM) and the X-ray absorption near edge structure spectra (XANES) of the deposited Pt nanoparticles.

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Section: ■ Results and Discussionmentioning

confidence: 99%

TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

et al. 2013

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“…However, in recent years, attention has been mostly paid to rhenium silicide, which is caused by several factors. First, it has been found that, of all the semiconducting silicides, rhenium silicide is best matched with silicon, the basic material of microelectronics [4,5]. Second, the manufacture and processing of rhenium silicide is rather simple [6].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, it has been found that rhenium disilicide may exist in several stable modifications: the stoichiometric composition ReSi 2 [6,8,9], or compositions with lack of silicon: ReSi 1.8 [4,7] and ReSi 1.75 [4,5,7,10]. The probability of ReSi 1.8 [4,7] or ReSi 1.75 [7] formation is much higher than that for ReSi 2 .…”

Section: Introductionmentioning

confidence: 99%

“…Much attention has been paid to studying the methods for production of rhenium silicides [4,10] and the crystal [5,[10][11][12], optical [4,6,7], electrical [7,8,10] and some other properties of these materials. However, the electronic structure of their valence band has not been properly investigated, despite the considerable opportunities and abundant information furnished by modern spectroscopic techniques.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of rhenium disilicides

Курганский

Переславцева

Levitskaya

et al. 2002

J. Phys.: Condens. Matter

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The valence band structure of amorphous and crystalline films of rhenium silicides has been studied by ultrasoft x-ray spectroscopy. A theoretical calculation of the electronic structure of bulk crystals and thin films of ReSi 2 and ReSi 1.75 was carried out. The experimental L 2,3 -spectra of silicon show the best correlation with the theoretical calculation for ReSi 1.75 . The decrease in the density of states at the Fermi level in ReSi 1.75 in comparison with ReSi 2 testifies that the phase with lack of silicon is more stable than the stoichiometric composition.

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“…The electron microscopic investigations were carried out by using a Philips TEM CM20FEG equipped with field emission gun and post-specimen scan unit as well as a Gatan electron energy loss spectrometer PEELS 666. This allows one to acquire the energy filtered electron scattering curves, which means nearly without inelastic background for better background subtraction [3]. For the determination of the grain size distribution during annealing, the thin films on support grids were annealed in situ by using a double-tilt specimen-heating holder.…”

Section: Methodsmentioning

confidence: 99%

Nanostructure and thermoelectric properties of ReSi 2±x thin films

Thomas

Hofman

Kleint

et al. 2002

Analytical and Bioanalytical Chemistry

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Anomalies in the nanostructure evolution of ReSi(2+/-x) thin films have proved to be of large interest in connection with their thermoelectric properties. By means of electron microscopic methods the correlation between structural properties and transport behaviour has been studied. The short-range order of the amorphous state was characterised by reduced density functions calculated from diffuse electron diffraction diagram and is found to correlate with the temperature dependence of the electrical resistance. The crystallisation process observed in situ in the transmission electron microscope starts with the formation of relatively large ReSi(1.75) grains (up to 100 nm). In later stages, only smaller grains are growing. This leads to a decrease in the mean grain size and to the increase of the nanocrystalline volume fraction during the heat treatment. This behaviour allows the investigation of the thermopower as function of the nanocrystalline volume fraction. Thus, at a nanocrystalline content of about 35% the thermopower exhibits a maximum in accordance with calculations.

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Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy

Cited by 5 publications

References 11 publications

TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

Electronic structure of rhenium disilicides

Nanostructure and thermoelectric properties of ReSi 2±x thin films

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Investigation of thermoelectric silicide thin films by means of analytical transmission electron microscopy

Cited by 5 publications

References 11 publications

TiSi2Ox Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

TiSi2Ox Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

Electronic structure of rhenium disilicides

Nanostructure and thermoelectric properties of ReSi 2±x thin films

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Product

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TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs

TiSi₂O_x Coated N-Doped Carbon Nanotubes as Pt Catalyst Support for the Oxygen Reduction Reaction in PEMFCs