Investigation of Ti/Pd Bilayer for Single Photon Detection

Taralli, E.; Portesi, C.; Rocci, R.; Rajteri, M.; Monticone, E.

doi:10.1109/tasc.2009.2019561

Cited by 16 publications

(12 citation statements)

References 11 publications

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“…The reason to use a very small bias current is to minimize the Joule heat so that the TES sample remains at the same temperature with the substrate and environment. This temperature can be set and changed by the temperature The device parameters are taken from reference [17]. The critical temperature of the TES is Tc = 105mK.…”

Section: A Resistance-temperature (R-t) Dependencementioning

confidence: 99%

“…For this simulation, we need an exhaustive set of TES device parameters which is unfortunately not given in most published works. We use the data from reference [17] which is relatively complete. The result of the simulation is shown in Fig.…”

Section: A Resistance-temperature (R-t) Dependencementioning

confidence: 99%

“…Most previous research is limited to small signal models [2] which cannot be used for important tasks such as determining the required dc biases and deriving the temperature sensitivity from easily measurable device parameters. Some studies try to model the temperature dependence of TES resistance using fitting functions such as the hyperbolic function [14], the error function [15], the Fermi function [16] and other expressions [17], [18]. Though convenient in producing resistance-temperature (R-T) curves matching experimental data measured under certain conditions that are often very different than the actual working conditions for the TES devices (see Section IV-A), these models are not based on sound physical considerations and their applicability is difficult to justify.…”

Section: Introductionmentioning

confidence: 99%

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Device modeling of superconductor transition edge sensors based on the two-fluid theory

Wang,

Guo,

Zhu

et al. 2012

Preprint

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In order to support the design and study of sophisticated large scale transition edge sensor (TES) circuits, we use basic SPICE elements to develop device models for TESs based on the superfluid-normal fluid theory. In contrast to previous studies, our device model is not limited to small signal simulation, and it relies only on device parameters that have clear physical meaning and can be easily measured. We integrate the device models in design kits based on powerful EDA tools such as CADENCE and OrCAD, and use them for versatile simulations of TES circuits. Comparing our simulation results with published experimental data, we find good agreement which suggests that device models based on the two-fluid theory can be used to predict the behavior of TES circuits reliably and hence they are valuable for assisting the design of sophisticated TES circuits.

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Section: A Resistance-temperature (R-t) Dependencementioning

confidence: 99%

Section: A Resistance-temperature (R-t) Dependencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Device modeling of superconductor transition edge sensors based on the two-fluid theory

Wang,

Guo,

Zhu

et al. 2012

Preprint

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“…The T c of pure Ti is from 360 to 500 mK [ 7 , 8 , 9 , 10 , 11 ] as the thicknesses changes. However, for a better Δ E , the T c should be ≈ 100 mK [ 12 , 13 , 14 , 15 , 16 , 17 ]. The tunable range of T c of a pure Ti film is limited.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Interface Composition to the Superconductivity of Ti/PdAu Films

Rajteri

et al. 2020

Nanomaterials

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In this work, the interface composition of the superconducting Ti/PdAu bilayer is tuned by an annealing process in N2 from 100 to 500 °C to control the superconducting transition temperature (Tc). This Ti-PdAu composition layer is characterized with a high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) to show the infiltration process. The surface topography, electrical, and cryogenic properties are also shown. The inter-infiltration of Ti and PdAu induced by the thermal treatments generates an intermixed layer at the interface of the bilayer film. Due to the enforced proximity effect by the annealing process, the Tc of Ti (55 nm)/PdAu (60 nm) bilayer thin films is tuned from an initial value of 243 to 111 mK which is a temperature that is suitable for the application as the function unit of a superconducting transition edge sensor.

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“…Presently, TESs are employed as microcalorimeters and bolometers to detect radiation in a wide spectral region, from millimeter waves to gamma rays. So far, TESs for IR-visible range have been fabricated using different superconducting materials: single layer-based TESs use tungsten [ 1 ], hafnium [ 2 ], or titanium [ 3 ], whereas bilayer-based TESs use titanium proximized by gold [ 4 ], palladium [ 5 ], or molybdenum proximized by gold [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Aluminum–Titanium Bilayer for Near-Infrared Transition Edge Sensors

Lolli

Taralli

Portesi

et al. 2016

Sensors

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Transition-edge sensors (TESs) are single photon detectors attractive for applications in quantum optics and quantum information experiments owing to their photon number resolving capability. Nowadays, high-energy resolution TESs for telecommunication are based on either W or Au/Ti films, demonstrating slow recovery time constants. We report our progress on the development of an Al/Ti TES. Since bulk aluminum has a critical temperature (Tc) of ca. 1.2 K and a sufficiently low specific heat (less than 10−4 J/cm3K2), it can be employed to produce the sensitive material for optical TESs. Furthermore, exploiting its high Tc, Al-based TESs can be trimmed in a wider temperature range with respect to Ti or W. A first Al/Ti TES with a Tc ≈ 142 mK, investigated from a thermal and optical point of view, has shown a response time constant of about 2 μs and single photon discrimination with 0.34 eV energy resolution at telecom wavelength, demonstrating that Al/Ti films are suitable to produce TESs for visible and NIR photon counting.

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Investigation of Ti/Pd Bilayer for Single Photon Detection

Cited by 16 publications

References 11 publications

Device modeling of superconductor transition edge sensors based on the two-fluid theory

Device modeling of superconductor transition edge sensors based on the two-fluid theory

Influence of the Interface Composition to the Superconductivity of Ti/PdAu Films

Aluminum–Titanium Bilayer for Near-Infrared Transition Edge Sensors

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