Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

Luan, Tiantian; Jiang, Qimeng; Huang, Sen; Wang, Xinhua; Jin, Hao; Guo, Fuqiang; Yao, Yixu; Fan, Jie; Yin, Haibo; Ke, Wei; Li, Yankui; Jiang, Haojie; Li, Junfeng; Liu, Xinyu

doi:10.1016/j.mee.2022.111916

Cited by 3 publications

(1 citation statement)

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“…An invisible current collapse occurs in the linear region under a quiescent bias of V GS, Q = 0 V, V DS, Q = 15 V. An abnormal negative I D is observed under pulse bias with V GS = 3 V, which may be attributed to the gate to drain parasitic capacitors charging current at high gate voltage during pulse testing. According to the pulse I−V measurement results and our previous V GS (V) V GS (V) results [23,28,29] , the combination of RPP and PECVD-SiN x is an effective passivation method for the UTB-AlGaN/GaN HEMTs.…”

Section: Rf Characteristic Characterization Analysismentioning

confidence: 81%

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Luan,

Huang,

Jing

et al. 2024

J. Semicond.

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Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f T/f MAX) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-µm gate and Au-free ohmic contact.

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Section: Rf Characteristic Characterization Analysismentioning

confidence: 81%