Investigation of vacancy-type complexes in GaN and AlN using positron annihilation

Arutyunov, N.Yu.; Mikhailin, A. V.; Davydov, V. Yu.; Emtsev, V. V.; Oganesyan, G. A.; Häller, E. E.

doi:10.1134/1.1513852

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2008

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Deep levels associated with dislocation annihilation by Al pre‐seeding and silicon delta doping in GaN grown on Si(111) substrates

Soh

Zang

Wang

et al. 2008

Physica Status Solidi (a)

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The introduction of Si burst during the growth of GaN film on Si(111) substrate by MOCVD formed a Six Ny layer which leads to an effective reduction in the density of screw dislocations. The reduction is associated with bending of screw dislocations to form a square dislocation loop when neighbouring dislocations with opposite Burger's vector paired up. The concentration of electron traps Ec–Et ∼0.17–0.26 eV which is associated with screw dislocations is substantially reduced and a kink is left at the silicon rich position. The mixed‐edge dislocation, however, is not annihilated by the Six Ny layer. Addition of TMAl burst for the AlN growth leads to a substantial reduction in trap concentration associated with the nitrogen vacancies, VN, and antisite of nitrogen, NAl, at Ec–Et ∼0.10 eV and Ec–Et ∼ 0.60 eV respectively. This improves the quality of the subsequent layer of HT‐GaN grown and is useful for device fabrication. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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