Investigation of ZnS–SiO2/Ag/ZnS–SiO2 as high stable transparent and conductive multilayer films

Long, Guoyun; Geng, Yaoxiang

doi:10.1016/j.apsusc.2012.09.104

Cited by 12 publications

(4 citation statements)

References 19 publications

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“…Kermani et al [17], investigating the effect of annealing on the optical transmittance and resistance of ZnS/Ag/ZnS/Ag/ZnS multilayer films deposited on glass substrates by thermal evaporation, showed that the optimum thickness of ZnS and Ag was 30 and 12 nm, respectively. It was shown that the sheet resistance decreased initially with increasing the annealing temperature and increased as the temperature exceeded 300 C. The optimized samples showed a sheet resistance of 2.6 U/sq and the transmittance of 77.86% at 100 C. Long et al [18] investigated the effect of annealing temperatures on the optical and electrical properties of ZnSeSiO 2 /Ag/ZnSeSiO 2 multilayer films deposited on glass substrates by magnetron sputtering at room temperature. They reported that the optimized ZnSeSiO 2 /Ag/ZnSeSiO 2 (45 nm/11 nm/ 45 nm) film exhibited a sheet resistance of 9.7 U/sq and a optical transmittance of 88.4% after annealing at 200 C. For the sample annealed at 200 C, the average transmittance in the visible range (380e780 nm) was 84.1%.…”

Section: Introductionmentioning

confidence: 97%

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Kim

Lee

et al. 2015

Current Applied Physics

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Section: Introductionmentioning

confidence: 97%

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Kim

Lee

et al. 2015

Current Applied Physics

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“…In Fig. 3 , a difference within the Q is produced when the PCM length is “zero” (bare RR) before and after the annealing process and we attribute this to the optical (refractive index) and electronic (sheet resistance) properties change induced by the annealing process (270 C) to the sputtered ZnS - protective layer 53 , 54 . The experimental data shows a linear fit for the Q-factors of the amorphous and crystalline states as the phase transition increases linearly with the length of .…”

Section: Resultsmentioning

confidence: 91%

Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile $$\hbox {Sb}_{2}\hbox {S}_{3}$$ phase change material

Ilie

Faneca

Zeimpekis

et al. 2022

Sci Rep

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A new family of phase change material based on antimony has recently been explored for applications in near-IR tunable photonics due to its wide bandgap, manifested as broadband transparency from visible to NIR wavelengths. Here, we characterize $$\hbox {Sb}_{2} \hbox {S}_{3}$$ Sb 2 S 3 optically and demonstrate the integration of this phase change material in a silicon nitride platform using a microring resonator that can be thermally tuned using the amorphous and crystalline states of the phase change material, achieving extinction ratios of up to 18 dB in the C-band. We extract the thermo-optic coefficient of the amorphous and crystalline states of the $$\hbox {Sb}_{2}\hbox {S}_{3}$$ Sb 2 S 3 to be 3.4 x $$10^{-4}\hbox {K}^{-1}$$ 10 - 4 K - 1 and 0.1 x 10$$^{-4}\hbox {K}^{-1}$$ - 4 K - 1 , respectively. Additionally, we detail the first observation of bi-directional shifting for permanent trimming of a non-volatile switch using continuous wave (CW) laser exposure ($$-5.9$$ - 5.9 to 5.1 dBm) with a modulation in effective refractive index ranging from +5.23 x $$10^{-5}$$ 10 - 5 to $$-1.20$$ - 1.20 x 10$$^{-4}$$ - 4 . This work experimentally verifies optical phase modifications and permanent trimming of $$\hbox {Sb}_{2}\hbox {S}_{3}$$ Sb 2 S 3 , enabling potential applications such as optically controlled memories and weights for neuromorphic architecture and high density switch matrix using a multi-layer PECVD based photonic integrated circuit.

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“…where ε s represents static permittivity, ε α is the infinite frequency permittivity, τ is the relaxation time, and σ is conductivity. To simplify the calculation, the visible-light absorption of ZnS-SiO 2 [46] in the air was considered negligible, that is the extinction coefficient (k) = 0. The calculated parameters are summarized in Tables 2 and 3.…”

Section: Modeling and Conditionmentioning

confidence: 99%

Study of Optical Information Recording Mechanism Based on Localized Surface Plasmon Resonance with Au Nanoparticles Array Deposited Media and Ridge-Type Nanoaperture

Kang

2022

Nanomaterials

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To verify the possibility of multiple localized surface plasmon resonance based optical recording mechanism, the present study has demonstrated that an Au nanoparticles array deposited with media combined with a ridge-type nanoaperture can amplify the |E|2 intensity of the incident optical light transmitted into the media under specific conditions. Using a numerical Finite-Difference Time-Domain method, we found that the optical intensity amplification first occurred in the near-field region while penetrating the ridge-type nanoaperture, then the second optical amplification phenomenon was induced between the metal nanoparticles, and eventually, the excitation effect was transferred to the inside of the media. In a system consisting of a Gold (Au) NPs deposited media and nanoaperture, various parameters to increase the |E|2 intensity in the near-field region were studied. For an Au nanoparticle size (Cube) = 5 nm × 5 nm × 5 nm, an inter-particle space = 10 nm, and a gap (between nanoaperture and media) = 5 nm, the |E|2 intensity of a ridge-type nanoaperture with an Au nanoparticles array was found to be ~47% higher than the |E|2 intensity of a ridge-type nanoaperture without an Au nanoparticles array.

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Investigation of ZnS–SiO2/Ag/ZnS–SiO2 as high stable transparent and conductive multilayer films

Cited by 12 publications

References 19 publications

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Thermo-optic tuning of silicon nitride microring resonators with low loss non-volatile $$\hbox {Sb}_{2}\hbox {S}_{3}$$ phase change material

Study of Optical Information Recording Mechanism Based on Localized Surface Plasmon Resonance with Au Nanoparticles Array Deposited Media and Ridge-Type Nanoaperture

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