Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser

Zitouni, Omar; Saidi, Hosni; Ridene, Said

doi:10.1007/s12633-024-02928-7

Silicon

2024

DOI: 10.1007/s12633-024-02928-7

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Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser

Omar Zitouni,

Hosni Saidi,

Said Ridene

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2024

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Cited by 2 publications

References 28 publications

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Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

Sahu,

Sahoo,

Swain

et al. 2024

Phys. Scr.

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This work analyses the effect of the non-square structure potentials, such as V-shaped (V), parabolic (P), cubic (C), semi-V (SV), semi-parabolic (SP), and semi-cubic (SC) on the low temperature electron mobility (μ) as a function of doping concentrations (N d = 0.1 to 3.0 × 1018 cm−3) in modulation δ-doped quantum well (QW) structures. We calculate μ by adopting screened ionized impurity (ii-) and alloy disorder (al-) scatterings. We consider higher subband occupancy up to three and show that the intersubband effects influence the screened scattering potentials differently, such that μ ii increases while μ al decreases, leading to nonlinear enhancement of μ. Further, there are sudden drops in μ, near the transition of occupation of subbands due to the intersubband effects, and the magnitude of the drop is reduced at the third subband occupancy. The number of occupied subbands (nos), for the considered range of N d , differs with NSQW structures, e.g., nos = 3 in the case of VQW, CQW, and PQW, nos = 2 in SCQW and SPQW, and nos = 1, in SVQW structures. Interestingly, in VQW, the occupation of the second subband starts at a higher N d , compared to CQW and PQW, while, the third subband occupancy shows an opposite trend. Furthermore, the dissimilarity in electron charge distributions in the NSQW structures influences the ii-scattering potential differently, causing μ ii (VQW) > μ ii (PQW) > μ ii (CQW), while for al-scattering the order of μ al reverses.

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Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

Sahu,

Sahoo,

Swain

et al. 2024

Phys. Scr.

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Mid-Infrared Emission in Ge/Ge1-xSnx/Ge Quantum Well Modeled Within 14-Band k.p Model

Zitouni,

Mastour,

Ridene

2024

Electronics

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Band structure and gain in a Ge/Ge1-xSnx/Ge quantum well are described theoretically using a 14-band k.p model. It has been shown that the quantum well width and the α-Sn concentration considerably modify the conduction and valence subband structure, and, as a result, the optical gain changes with the insertion of a very small concentration of α-Sn. In particular, we have determined the necessary injection carrier density Nj and the critical α-Sn concentration for elevated high gain lasing. It is found that for Nj = 1.5 × 1018 cm−3, we achieved a maximum peak gain for α-Sn concentration of the order 0.155. We can predict that Ge/Ge1-xSnx/Ge QWs should be manufactured with an α-Sn concentration less than 0.155 in devices for optoelectronics applications such as telecommunication and light emitting laser diodes.

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Investigation of α-Sn Dependence of Band Structure and Optical Emission in Si/SiyGe1-x-ySnx/Si Quantum Well Laser

Cited by 2 publications

References 28 publications

Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures

Mid-Infrared Emission in Ge/Ge1-xSnx/Ge Quantum Well Modeled Within 14-Band k.p Model

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