2023
DOI: 10.1088/1361-6463/acf7d0
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Investigation on floating-gate field-effect transistor for logic-in-memory application

Sueyeon Kim,
Sangki Cho,
Insoo Choi
et al.

Abstract: In this paper, we present analysis results on the applicability of a previously introduced memory device, floating-gate field-effect transistor (FGFET), to a logic-in-memory system for the first time. Device optimization and compact modeling were performed using a well-calibrated technology computer-aided design (TCAD) model and the results of applying logic-in-memory circuits were arranged. Device optimization in the 32 nm technology node was conducted by assessing the device performance in terms of memory wi… Show more

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Cited by 1 publication
(3 citation statements)
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“…In this study, we analyzed the use of Synopsys Sentaurus TM TCAD [25]. Effective calibration was achieved by stacking a vertical-FET (VFET) on the gate of the SFET in the same way as in a previous paper [23]. The SFET has a similar structure to a conventional planar MOSFET and is fabricated in 32 nm technology, which is the most advanced process for planar MOSFETs.…”
Section: Fgfet-sdb -Csb Electrical Properties As a Function Of Temper...mentioning
confidence: 99%
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“…In this study, we analyzed the use of Synopsys Sentaurus TM TCAD [25]. Effective calibration was achieved by stacking a vertical-FET (VFET) on the gate of the SFET in the same way as in a previous paper [23]. The SFET has a similar structure to a conventional planar MOSFET and is fabricated in 32 nm technology, which is the most advanced process for planar MOSFETs.…”
Section: Fgfet-sdb -Csb Electrical Properties As a Function Of Temper...mentioning
confidence: 99%
“…RT indicates how long the data are stored without applying voltage to all the nodes while writing data '0' or '1' to the memory device. To measure the RT of the FGFET, we write each data to the FGFET and calculate the voltage difference across the memory nodes (∆V MN ), which is the voltage difference between data '0' and '1' in the turn-off state [23]. Figure 3 shows the RT of the FGFET-SDB and FGFET-CSB models as a function of temperature, as well as the write speed at room temperature.…”
Section: The Retention Time Of Fgfet-csb and Sdbmentioning
confidence: 99%
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