Investigation on La3+ and Dy3+ co-doped ceria ceramics with an optimized average atomic number of dopants for electrolytes in IT-SOFCs

Venkataramana, Kasarapu; Madhuri, Chittimadula; Madhusudan, Ch.; Reddy, Y. S.; Bhikshamaiah, G.; Reddy, C. Vishnuvardhan

doi:10.1016/j.ceramint.2018.01.020

Cited by 42 publications

(9 citation statements)

References 41 publications

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“…Co-doping of ceria has been accomplished for many systems, such as Gd-Y, Gd/Sm-, La/Sm-, Sm/Nd-, Nd/Gd-, La/Dy-, Gd/Sm/La, and even others, due to the generally observed lowering of activation energy to ionic conduction and enhancement of ionic conductivity ,, with respect to singly doped ceria. Within this framework, the present research group recently undertook an experimental study of the structural, Raman, and transport properties of two co-doped systems having the same average doping ion size as Sm-doped ceria, namely Ce 1– x (Nd 0.63 Dy 0.37 ) x O 2– x /2 and Ce 1– x (Nd 0.74 Tm 0.26 ) x O 2– x /2 …”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Defect Cluster Content in Singly and Doubly Doped Ceria through In Situ High-Pressure X-ray Diffraction

et al. 2021

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Defect aggregates in doped ceria play a crucial role in blocking the movement of oxygen vacancies and hence in reducing ionic conductivity. Nevertheless, evaluation of their amount and the correlation between domain size and transport properties is still an open issue. Data derived from a high-pressure X-ray diffraction investigation performed on the Ce 1– x (Nd 0.74 Tm 0.26 ) x O 2– x /2 system are employed to develop a novel approach aimed at evaluating the defect aggregate content; the results are critically discussed in comparison to the ones previously obtained from Sm- and Lu-doped ceria. Defect clusters are present even at the lowest considered x value, and their content increases with increasing x and decreasing rare earth ion (RE 3+ ) size; their amount, distribution, and spatial correlation can be interpreted as a complex interplay between the defects’ binding energy, nucleation rate, and growth rate. The synoptic analysis of data derived from all of the considered systems also suggests that the detection limit of the defects by X-ray diffraction is correlated to the defect size rather than to their amount, and that the vacancies’ flow through the lattice is hindered by defects irrespective of their size and association degree.

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Section: Introductionmentioning

confidence: 99%

Evaluation of the Defect Cluster Content in Singly and Doubly Doped Ceria through In Situ High-Pressure X-ray Diffraction

et al. 2021

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“…As is well known, oxygen vacancies play a vital role in semiconductor photocatalysis. Therefore, inducing large effects on the electronic, photonic, and photocatalytic properties of TiO 2 , oxygen deficiencies are critical features [46][47][48].…”

Section: Resultsmentioning

confidence: 99%

Functional Oxide Thin Films and Nanostructures: Growth, Properties, and Applications

2022

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“…In addition to the numerous studies performed on singly-doped ceria systems, also a large number of doubly-and multiply-doped systems has been investigated, such as Gd/Y- [43], Gd/Sm- [44], La/Sm- [35], Sm/Nd- [45], Nd/Gd- [46], La/Dy- [47], Gd/Sm/La [48]. A general lowering of activation energy [33] and an improvement of the ionic conductivity properties [43,49,50] with respect to singly-doped ceria is often observed.…”

Section: Ionic Conductivity In Bulk Doped Ceriamentioning

confidence: 99%

High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

2021

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Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

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Investigation on La3+ and Dy3+ co-doped ceria ceramics with an optimized average atomic number of dopants for electrolytes in IT-SOFCs

Cited by 42 publications

References 41 publications

Evaluation of the Defect Cluster Content in Singly and Doubly Doped Ceria through In Situ High-Pressure X-ray Diffraction

Evaluation of the Defect Cluster Content in Singly and Doubly Doped Ceria through In Situ High-Pressure X-ray Diffraction

Functional Oxide Thin Films and Nanostructures: Growth, Properties, and Applications

High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

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