Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing

Raj, Abhishek; Sharma, Shashi Kant

doi:10.1016/j.mejo.2024.106312

Cited by 2 publications

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Performance evaluation of gate engineered ferroelectric MIMOS for analog/electrical IC applications

Pathak,

Verma,

Dhar Malhotra

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

This work examines various materials for gate electrode for enhancingthe performance of M-Fe-MIMOS (Metal Ferroelectric Metal InsulatorMetal Oxide Semiconductor Field Effect Transistor (MOSFET)). Thedevice is analysed for different analog, electrical and RF parameterswith gate materials such as chromium, tungsten and palladium. Thegate stacked attached to MOSFET device consists ferroelectric layersandwiched with insulator for focusing on reliability and stability ofM-Fe-MIMOS. The palladium gate material for M-Fe-MIMOS(spacer)shows better analog parameters such as improvement in leakage currentby 106 times that results 107 times higher switching ratio as compare tochromium. Also with higher threshold voltage by 428% and lower subthresholdswing by 340% as compare to chromium, M-Fe-MIMOS(spacer)shows better immunity towards various noise distortions. The electricalproperties of the device are analysed in terms of electric field , electricpotential and energy band structure.All the analysed results indicatethat palladium as a gate material for the M-Fe-MIMOS shows mostimproved electrical performance and can further be used for variousapplications in nanoelectronic devices and integrated circuit (IC) design.

show abstract

Performance evaluation of gate engineered ferroelectric MIMOS for analog/electrical IC applications

Pathak,

Verma,

Dhar Malhotra

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

Ultrasensitive Gas Nanosensor Based on Doping-less Carbon Nanotube Tunnel Field-Effect Transistor with a Sensitive Drain-Gate

Tamersit,

Bourouba

2024

2024 IEEE Workshop on Complexity in Engineering (COMPENG)

View full text Add to dashboard Cite

Investigation on palladium gate electrode-based SOI junctionless FET for hydrogen gas sensing

Cited by 2 publications

References 25 publications

Performance evaluation of gate engineered ferroelectric MIMOS for analog/electrical IC applications

Performance evaluation of gate engineered ferroelectric MIMOS for analog/electrical IC applications

Ultrasensitive Gas Nanosensor Based on Doping-less Carbon Nanotube Tunnel Field-Effect Transistor with a Sensitive Drain-Gate

Contact Info

Product

Resources

About