2021
DOI: 10.1016/j.jallcom.2021.159479
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Investigation on spectroscopic and electrical properties of p-Si/CdSxSe1−x (0≤ x ≤1) heterostructures for photodetector applications

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Cited by 17 publications
(5 citation statements)
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“…All films exhibited a single peak close to 307 cm À1 corresponding to longitudinal optical phonon vibrations (LO). 6 No additional peaks were observed indicating high purity phase CdS. Compared to CdS, a shift of 1 cm À1 in CuCdS, is assigned to surface optical phonon mode effects.…”
Section: Materials Advances Papermentioning
confidence: 94%
See 1 more Smart Citation
“…All films exhibited a single peak close to 307 cm À1 corresponding to longitudinal optical phonon vibrations (LO). 6 No additional peaks were observed indicating high purity phase CdS. Compared to CdS, a shift of 1 cm À1 in CuCdS, is assigned to surface optical phonon mode effects.…”
Section: Materials Advances Papermentioning
confidence: 94%
“…High photocurrent can be achieved in the material with (i) high crystallinity, (ii) large grain size, (iii) high absorption and (iv) optimum band gap. CdS is highly crystalline, with a large grain size 6 and suitable optical properties for the detection of light. 7 However, the optical properties can be further tuned to collect more photons.…”
Section: Introductionmentioning
confidence: 99%
“…在过去的几十年里,一维半导体纳米结构(如纳米带 [1] 、纳米棒 [2] 、和纳米 线 [3] )由于特殊的物理特性,在光电探测器中得到了广泛的关注 [4,5] 。光电探测 器具有将光转换为电信号的能力,实现信息传输, 其在环境监测、传感器、水杀 菌、光通信和工业生产方面具有广泛的应用 [6,7] 。光电探测器根据其工作波段可 分为紫外光电探测器、可见光光电探测器和红外光电探测器。 目前,人们对光的利用主要集中在可见光波段。Ⅱ-Ⅵ族硫族半导体化合物 及合金(CdSe [8] 、CdS [9] 、ZnS [10] 、ZnSe [11] 、ZnS x Se 1-x [12] 和 CdS x Se 1-x [13] 等)在可 见光和近红外范围内表现出优异的光学性质, 在光电器件方面具有潜在的应用价 值 [14][15][16] ,因而受到了人们的广泛研究。硫系合金纳米带 CdS x Se 1-x 兼具了 CdS 和 CdSe 的物理性质,其带隙介于 1.72 eV(CdSe)和 2.44 eV(CdS)之间 [17] ,并 且可以通过改变元素的组分来调节其光学带隙 [18][19][20] ,具有优异的光电性能,是构 建高性能光电器件的理想材料 [21,22] 。近年来,基于三元合金 CdS x Se 1-x 各种结构 的光电探测器被相继报道,并且表现出优异的光电性能。2015 年 guo 等人 [19] 设 计了三元带隙梯度 CdS 1-x Se x 纳米线芯片大面积宽带响应光电探测器,实现了从 紫外到 700 nm 的光响应,在室温和低温下表现出较大的光电流和光电导率,明 暗电流比可达 10 6 。同时通过商业化的 CVD 路线制备,它可以取代硅基探测器, 进而满足许多应用领域的要求。2018 年 Li 等人 [23] 通过热蒸发法制备了单根 CdS 0.76 Se 0.24 纳米带光电探测器,为可控波长的光电探测器设计提供了一种新的 策略,且光电性能优异,在 1 V 偏压 674 nm 单射光照射下,响应度和外量子效 率分别为 10.4 A/W 和 1.90×10 3 %, 响应时间为 1.62/4.70 ms。 为了提高基于 CdSSe 的光电探测器的光谱响应范围, 2018 年 Peng 等人 [24] 制备了基于 PbS 量子点修 3 / 21 饰二维非层状 CdS 0.33 Se 0.67 纳米片的杂化光电探测器,实现了从可见光到近红外 的宽带响应, 在 405 nm 光照射下, 开关比达 3.45×10 6 , 光谱响应度达 1.45×10 3 A/W 和探测率达 1.05×10 15 Jones,响应时间为 0.47 s/0.75 s。2021 年 Moger 等人 [25] 利 用热共蒸发法在 p-Si 上沉积了 n-CdS x Se 1-x 薄膜进而制备了 p-n 结光电二极管, 并研究了其组分对结构、光学和电学性能的影响,其中 x = 0.2 时,在 635 nm 光 下表现出高响应和高光敏性,响应度达 0.11 A/W。 在光电子器件中加入贵金属纳米结构被认为是在不增加器件尺寸的情况下 提高器件性能的最有前途的方法 [26][27][28] 。贵金属通常认为是很稳定的惰性材料,但 贵金属纳米材料由于局域表面等离子体共振(LSPR)效应所引起的选择性光吸 收、散射以及电磁场增强等特殊的性能而备受关注 [29] ,同时贵金属纳米结构的 形貌会对 LSPR 有影响,如贵金属纳米粒子 [30] 、贵金属纳米岛 [31] 、贵金属纳米 棒 [32] 等已经被研究报道过。因此,近年来越来越多的研究报道将贵金属纳米材 料与各种光电器件相结合, 如太阳能电池…”
Section: 引言unclassified
“…In the last decades there has been a growing interest for their ternary solid solutions, CdS 1−x Se x , since the variation of the Se content offers the possibility to gradually tune the band gap between those of the CdS and CdSe end-members [1][2][3][4]. Besides their recent use mainly as optoelectronic and nonlinear optical devices as well as cut-off filters [5][6][7][8][9], CdS 1−x Se x have found applications as artists' pigments during the twentieth century [10]. Cadmium red is the name used for denoting this class of pigments.…”
Section: Introductionmentioning
confidence: 99%