Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

Lin, Qian; Jia, Li-Ning; Wu, Hai-Feng; Wang, Xiaozheng

doi:10.3390/mi13071121

Cited by 7 publications

(5 citation statements)

References 27 publications

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“…As the mainstream of multifunction chip, MCM is used to achieve greater wiring density and higher integration [2]. Furthermore, the system characteristic of miniaturization, multifunction, and high performance can be realized by packaging different singlefunction chips [3]. However, due to the multiple chip packaging, the number of heat sources and power density in MCM is increasing.…”

Section: Introductionmentioning

confidence: 99%

Thermal Characteristic Investigation for a Multichip Module Based on APDL

Lin,

Zhao,

Yang

et al. 2024

International Journal of RF and Microwave Computer-Aided Engine

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Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3-D model is established based on ANSYS Parametric Design Language (APDL). Then, the steady-state thermal analysis is achieved to complete the automatic calculation of thermal characteristic. As a result, the temperature, stress, and deformation are investigated in details, and its temperature distribution, stress distribution, deformation distribution, and reliability variations of this MCM under different powers and temperatures can be obtained. This can provide important theoretical reference for the chip package optimization. Different from other studies which only focus on temperature or stress, it is more comprehensive and systematic for the thermal characteristic analysis of MCM. Meanwhile, this MCM is also representative for wireless communication system. It is of great significance to optimize the layout design and improve the thermal characteristic for IC.

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Section: Introductionmentioning

confidence: 99%

Thermal Characteristic Investigation for a Multichip Module Based on APDL

Lin,

Zhao,

Yang

et al. 2024

International Journal of RF and Microwave Computer-Aided Engine

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“…In 2022, a performance analysis of PAs under different conditions of temperature and humidity was completed [12]. In the same year, Lin deeply studied the temperature degradation law of PAs [13]. Moreover, considering the differences in circuit structure, integration, device materials, and experimental environment, there have been few studies on the temperature behavior of high-power amplifiers.…”

Section: Introductionmentioning

confidence: 99%

Temperature Reliability Investigation for a 400 W Solid-State Power Amplifier under High and Cold Conditions

Lin,

You,

et al. 2023

Electronics

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In order to study the temperature reliability of high-power amplifiers under high cand cold conditions, a 400 W solid-state power amplifier was taken as an example to explore the variation in its performance. The test results showed that its output power, gain, and power-added efficiency increased with the increase in temperature at a fixed frequency. Under a fixed input power, Pout and gain both showed different trends with the rising temperature. Within the frequency band of 2–10 MHz, the higher the temperature, the better the output power and gain. However, within the frequency range of 10–30 MHz, the higher the temperature, the worse the performance. Moreover, with the increasing temperature, its power-added efficiency, the second harmonic and the third harmonic also showed a decreasing trend. Detailed analysis showed that the degradation and inversion of performance parameters are closely related to the zero temperature coefficient and self-heating effect of the lateral double-diffused metal–oxide–semiconductor field-effect transistor. Meanwhile, it is also affected by the circuit structure and thermal design of the PA. In order to ensure stable performance in different environments, performance degradation can be improved by hardware compensation. Therefore, analyzing the working parameters at different temperatures for high-power PAs is the key to achieving temperature control and ensuring their long-term stability and reliability. This can provide relatively accurate reference data for subsequent heat dissipation optimization, greatly improve design efficiency, and even shorten the development cycle and reduce costs.

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“…However, the methods presented in similar literatures all need much measurement time to obtain the performance varitions 6,12,13,15 . This drawback causes the characteristics to be studied only at certain temperatures 6,10–16 . Moreover, considering the limitation of experimental devices, it is almost impossible to measure all the data.…”

Section: Introductionmentioning

confidence: 99%

“…To some extent, its performance directly determines the reliable operation of communication system. However, the communication system often works in the severe environments, such as the low temperature, high temperature, large temperature difference, high humidity, and so on 6,7 . The harsh conditions will definitely have a significant impact on the performance of PA.…”

Section: Introductionmentioning

confidence: 99%

“…It has been also reported that the rising temperature can lead to the performance degradation of PA 10–15 . However, the methods presented in similar literatures all need much measurement time to obtain the performance varitions 6,12,13,15 . This drawback causes the characteristics to be studied only at certain temperatures 6,10–16 .…”

Section: Introductionmentioning

confidence: 99%

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Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Lin,

Jia,

et al. 2023

Int J Numerical Modelling

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As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize the performance variation of PA at any temperature, the temperature behavior of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain monolithic microwave integrated circuit (MMIC) PA is modeled in this paper. In this modeling, the resilient back propagation neural network (BPNN) is utilized to do the temperature behavior modeling for this PA. The investigation shows that the minimum mean square error (MSE) of the prediction results is 4.9607 × 10−4, which implies that it is feasible to use this modeling method to characterize the temperature behavior of PA. This modeling not only theoretically overcomes the problem of slow convergence speed of BPNN, but also solves the limitation of experimental devices and time setting. It will provide a more convenient guidance for test engineers.

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Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

Cited by 7 publications

References 27 publications

Thermal Characteristic Investigation for a Multichip Module Based on APDL

Thermal Characteristic Investigation for a Multichip Module Based on APDL

Temperature Reliability Investigation for a 400 W Solid-State Power Amplifier under High and Cold Conditions

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

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