2022
DOI: 10.3390/mi13050791
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Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Abstract: A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectr… Show more

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Cited by 4 publications
(3 citation statements)
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“…More recently, the stress induced by the alloyed ohmic contacts has also been recognized as a major source of mechanical stress by two independent studies [37,38]. Hightemperature processing required for alloying was deemed the culprit behind the stress generation by these two references.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…More recently, the stress induced by the alloyed ohmic contacts has also been recognized as a major source of mechanical stress by two independent studies [37,38]. Hightemperature processing required for alloying was deemed the culprit behind the stress generation by these two references.…”
Section: Resultsmentioning
confidence: 99%
“…Hightemperature processing required for alloying was deemed the culprit behind the stress generation by these two references. First, Meng et al investigated ohmic contacts to double channel AlGaN/GaN HEMTs and discovered that high temperature annealing leads to a considerable volume expansion, thereby increasing the tensile stress in the film [37]. Similarly, Whiting et al studied alloyed ohmic contacts on single channel HEMTs and proposed that due to (1) material mixings such as nitrogen out-diffusion into the metal stack, (2) gold migration from the metal surface to the deeper layers, and (3) aluminium reactions with titanium and gold, large strain fields may form [38].…”
Section: Resultsmentioning
confidence: 99%
“…They proved that the width of a single grating line in the standard could be regulated with great uniformity by precisely utilizing ALD. Meng et al [ 12 ] proposed a side ohmic contact mode for the double-channel GaN/AlGaN epitaxial layer. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at annealing temperatures ranging from 700 °C to 850 °C.…”
mentioning
confidence: 99%