2017
DOI: 10.1016/j.jallcom.2016.09.290
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Investigation on the effect of Al concentration on the structural, optical and electrical properties of spin coated Al:ZnO thin films

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Cited by 47 publications
(11 citation statements)
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“…This is why the optical band gap gets enhanced after irradiation. A similar effect was found in the Al-doped ZnO in which an additional carrier concentration is gained by Al doping, whereas in our case, this energy band gap shift has been obtained due to gamma irradiation. Another possibility is due to the lattice parameter shrinkage after irradiation.…”
Section: Resultssupporting
confidence: 89%
“…This is why the optical band gap gets enhanced after irradiation. A similar effect was found in the Al-doped ZnO in which an additional carrier concentration is gained by Al doping, whereas in our case, this energy band gap shift has been obtained due to gamma irradiation. Another possibility is due to the lattice parameter shrinkage after irradiation.…”
Section: Resultssupporting
confidence: 89%
“…Where P is a constant for direct transition, and hʋ photon energy: free electrons will occupy the lowest states of the conduction band, pushing the fermi level to move towards higher level in energy [19].…”
Section: Resultsmentioning
confidence: 99%
“…Recent research on AZO films has converged on the understanding of the atomic and electronic structure, both theoretically [ 13 ] and experimentally. [ 19 ] Due to the complexity of the doping process associated with the physical and chemical properties of ZnO, several chemical elements such as Ag, [ 17 ] Al, [ 16 ] B, [ 20 ] Ga, [ 21 ] Sn, [ 22 ] and Ti [ 23 ] have been studied as degenerative agents of ZnO properties. Studies by Chan et al [ 23 ] analyzed thin films of AZO, gallium (GZO), and titanium (TZO) with different doping concentrations, produced by radio frequency (RF) magnetron.…”
Section: Introductionmentioning
confidence: 99%