A one-step metal-catalyzed
process for transforming carbon films
into high-quality graphene layers for potential use in various cutting-edge
technologies was developed in this study. Carbon ultrathin films grown
on CoFe alloy ultrathin sublayers by filtered cathodic vacuum arc
using different ion kinetic energies were subjected to thermal annealing
at 650 °C for 150 s. X-ray photoelectron spectroscopy, Raman
spectroscopy, and molecular dynamics simulations provided insight
into phase changes and graphenization at the molecular level. Atomic
force microscopy, scanning electron microscopy, and energy dispersive
X-ray spectroscopy were used to characterize the surface morphology
and elemental composition of the C films and the CoFe sublayer before
and after thermal annealing. It was found that increasing the C+ ion kinetic energy during C film deposition enhanced graphenization;
however, a very high ion kinetic energy had the opposite effect. The
sp3/sp2 ratio in the as-deposited C films played
a critical role in graphene formation during thermal annealing. Contrary
to amorphization, graphenization involved a three-step process encompassing
the sequential transformation of high sp3 C to low sp3 C, low sp3 C to graphite, and, last, graphite
to nanocrystalline graphite. Variations in the C+ ion kinetic
energy indirectly affected the dependence of graphene growth on the
hybridization state of the as-deposited C films, the carbon concentration
in the CoFe sublayer, and the stability and uniformity of the catalyst
CoFe sublayer during thermal annealing, in this manner influencing
the overall metal-catalyzed C graphenization process.