Investigation on the growth, optical, electrical, thermal and third order NLO properties of 2-(4-methlybenzylidene) malononitrile (MBM) single crystal

Keerthi, L.R.; Anand, Srinivasan; Kalainathan, S.; Jaikumar, D.

doi:10.1016/j.optmat.2020.110216

Cited by 15 publications

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“…The absorbed data will give us details about the material‘s nonlinear coefficient of absorption (β) [59] . The thickness of the material for which the experiment is carried out is 1 mm, which is within the criteria to satisfy the thin film approximation (Z R =1.2 mm) [60] …”

Section: Morphology Within the Dsna Crystalmentioning

confidence: 99%

“…[59] The thickness of the material for which the experiment is carried out is 1 mm, which is within the criteria to satisfy the thin film approximation (Z R = 1.2 mm). [60] Closed aperture mode Figure 14 signifies the closed aperture mode plot. By measuring the difference in the normalized transmittance between the peak and valley (T p-v ) near the focus (at Z = 0), the alteration in the phase shift axis (ΔΦ) is calculated.…”

Section: Nlo Profile Measurement -Z Scan Testmentioning

confidence: 99%

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Physicochemical and Nonlinear Optical Properties of a Stilbazolium Family Single Crystal with Third Order Nonlinear Optical Activity

Anand

Rani

2023

ChemPhotoChem

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The idea of incorporating a novel counter anion group with the organic stilbazolium cation (C16H19N2+) yields a new third harmonic generation active single crystal of 4‐[2‐(4‐Dimethylamino‐phenyl)‐vinyl]‐1‐methyl‐pyridinium 2‐Nitroaniline‐4‐sulfonate (DSNA). The slow evaporation solution growth technique is employed to obtain DSNA crystals, whose nonlinear responses are analyzed through a continuous wave laser Z scan experiment. The thermally induced strong reverse saturation absorption and self‐defocusing behaviour of DSNA crystal infers the aptness of the material as an optical limiting device. Optical characterization outcomes imply that the lower absorption edge falls in the visible region (530 nm), with a broad transparency range of 0.53 to 1 μm. Exploration of other optical constants, extinction coefficient (k = 10‐4), emission wavelength (620 nm – red light), optical (σopt = 1010 Ωm‐1) and electrical conductivity (σelc = 1011 Ωm‐1) also concludes that DSNA crystal is a possible applicant for optoelectronic devices. The various bonds and corresponding lengths and angles involved in the formation of DSNA ionic crystal are evaluated by means of the Single Crystal X‐Ray Diffraction (SCXRD) technique. Linear and nonlinear optical property findings undoubtedly affirm that the titular DSNA crystal is an effectual Nonlinear Optical (NLO) crystal.

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Section: Morphology Within the Dsna Crystalmentioning

confidence: 99%

Section: Nlo Profile Measurement -Z Scan Testmentioning

confidence: 99%