Investigation on the impedance spectroscopy and electrical conduction mechanism in 
                
                  
                
                $$\hbox {SrTi}_{1-x}\hbox {V}_{x}\hbox {O}_3$$
                
                  
                    
                      
                        SrTi
                        
                          1
                          -
                          x

Mantry, Snigdha Paramita; Sarun, P.M.

doi:10.1007/s10854-019-00991-0

Cited by 2 publications

(1 citation statement)

References 34 publications

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“…SrTi 1−x V x O 3 is of particular interest as it is gives access to a tuned electronic structure between SrVO 3 and SrTiO 3 , which gives an insight into the rise of interesting correlated electron behaviour. Beyond this composition-driven MIT, other properties of this doped system have been investigated such as its impedance spectroscopy and electrical conduction mechanism for certain dopings [35] and it may also be classified as a correlated transparent conductive oxide [32] which has the potential for use in optoelectronic devices. Several studies have measured the critical doping for the MIT to be at different dopings, ranging from between 0.4 [32], 0.6 [34], 0.67 [33] and 0.7 [31].…”

Section: Introductionmentioning

confidence: 99%

Composition-driven Mott transition within SrTi 1−x V x O₃

James,

Aichhorn,

Laverock

2024

Electron. Struct.

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The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO3 and SrTiO3. The electronic configuration of these perovskites differs by one electron associated to the transition metal species which gives rise to the drastically different electronic properties. Therefore, it is natural to look into how the electronic structure transitions between these bulk structures by using doping. Measurements of the substitutional doped SrTi1−xVxO3 shows an metal-insulator transition (MIT) as a function of doping. By using supercell density functional theory with dynamical mean field theory (DFT+DMFT), we show that the MIT is indeed the result of the combination of local electron correlation effects (Mott physics) within the t2g orbitals and the atomic site configuration of the transition metals which may indicate dependence on site disorder. SrTi1−xVxO3 may be an ideal candidate for benchmarking cutting-edge Mott-Anderson models of real systems. We show that applying an effective external perturbation on SrTi1−xVxO3 can switch the system between the insulating and metallic phase, meaning this is a bulk system with the potential use in Mott electronic devices.

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