Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing

Liu, Chunyang; Ren, Pengpeng; Zhou, Bo; Zhang, Chenglong; Fang, Hui; Ji, Zhigang

doi:10.1109/access.2021.3134687

IEEE Access

2021

DOI: 10.1109/access.2021.3134687

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Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing

Chunyang Liu

Pengpeng Ren

Bo Zhou

et al.

Abstract: Date of publication xxxx 00, 0000, date of current version xxxx 00, 0000.

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2024

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Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Xu,

Zhang,

Ding

et al. 2024

Applied Physics Letters

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In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electrode. Two types of resistive switching (RS) behaviors were observed within a single device at different temperatures. At room temperature, the dominant control mechanism was the interface Schottky barrier, whereas at higher temperatures, the primary driving force shifted to the conductive channel. The device has an on/off ratio exceeding 103 under the interface control mechanism. The migration of mobile bromine vacancies within the Cs2Pb(SCN)2Br2 film, whose concentration was enhanced by the infiltration and reaction of the Ag active electrode within the Cs2Pb(SCN)2Br2 film, is proposed to be the root cause for both types of RS characteristics. These findings offer insights into the potential application of 2D Cs2Pb(SCN)2Br2 perovskite in RS memory devices.

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Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Xu,

Zhang,

Ding

et al. 2024

Applied Physics Letters

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show abstract

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Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing

Abstract: Date of publication xxxx 00, 0000, date of current version xxxx 00, 0000.

Cited by 1 publication

References 41 publications

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

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