Investigation on the Interface Thermal Resistance of Copper-Titanium

Xu, Yixin; Zhu, Fulong; Wang, Miaocao; Lu, Zilin; Hu, Jianli; Zeng, Pengjun

doi:10.1109/icept47577.2019.245729

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In-situ Temperature-dependent Sheet Resistance1

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2024

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“…Compared to the 10 °C min −1 , the 20 °C min −1 temperature gradients show a gradual change of resistance in Cu films. Generally, the observed phenomenon is due to the activation of Cu atoms with increasing temperature [28]. The increased heating rate aids in producing voids or defects in the film and possibly increases the resistance [29].…”

Section: In-situ Temperature-dependent Sheet Resistancementioning

confidence: 99%

In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations

Chavan,

Kim,

Choi

et al. 2024

Nanotechnology

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Controlling and preventing Cu oxidation is crucial for improving the performance and reliability of Cu-Cu bonding. Ni-B films were selectively deposited on Cu films to block the Cu oxidation. The resistivity changes of the Cu films in N2 and O2 ambient were measured by using a four-point probe in the in-situ temperature-dependent resistance measurements at the temperature from room temperature to 400°C. The resistivity changes of the 100nm-thick Cu films without Ni-B increased rapidly at a higher temperature (284°C) in the O2 ambiance. The change of resistivity-increase of 100nm-thick Cu with ~50 nm-thick Ni-B (top) film was lower than the Cu films without Ni-B films due to the blocking diffusion of O2 atoms by the Ni-B films. The resistivity-change and oxidation barrier properties were studied using SEM, FIB, TEM, EDX, and SIMS tools. The proposed article will be helpful for the upcoming advancement in Cu-Cu bonding using selected-area deposition.

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Section: In-situ Temperature-dependent Sheet Resistancementioning

confidence: 99%