Investigation on the interfacial stability of multilayered Cu–W films at elevated deposition temperatures during co-sputtering

Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

“…[1][2][3][4][5][6] However, Cu can react easily with Si to produce copper silicide with high resistivity at high temperature, leading to circuit damage and affecting the service life of electrical equipment. [7][8][9][10][11][12] To overcome this problem, it is now common to add a diffusion barrier between copper and silicon to prevent this reaction. 8,[13][14][15] Nonetheless, as the feature size of ICs shrinks and with increasing demands for interconnect materials with low resistivity, traditional diffusion barriers cannot meet current requirements.…”

“…[7][8][9][10][11][12] To overcome this problem, it is now common to add a diffusion barrier between copper and silicon to prevent this reaction. 8,[13][14][15] Nonetheless, as the feature size of ICs shrinks and with increasing demands for interconnect materials with low resistivity, traditional diffusion barriers cannot meet current requirements. [16][17][18][19] Therefore, barrierless Cu metallization methods have been introduced by doping Cu with diffusion-inhibiting elements.…”

“…Doping elements such as Cr, Ti, Mn, and W have been widely studied. 8,16,20 After annealing, the alloy elements (M) accumulate at grain boundaries and defects of the Cu grains to prevent contact between Cu and Si. 27 Meanwhile, the alloy elements accumulate at the interface between the Cu(M) film and SiO 2 or Si substrate to form a thin diffusion barrier.…”