Investigation on the Intermixing of Cu and In Layers for the Formation of Cu2In2O5 Thin Films

Sundaresh, Sreeram; Saikumar, Ashwin Kumar; Sundaram, Kalpathy B.

doi:10.1149/2162-8777/ac844c

Cited by 7 publications

(6 citation statements)

References 42 publications

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“…It is important to note that there is an absence of satellite peaks corresponding to the Cu-doublet that appears towards the higher energy side of the main peaks. A similar absence of satellite peaks has been reported previously in the literature that report single-phase Cu-based delafossites [35,36,57].…”

Section: Resultssupporting

confidence: 89%

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

2023

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For the first time, the deposition of CuCrO2 thin films was carried out using a dual-target RF magnetron sputtering technique using Cu2O and Cr2O3 targets. The deposited films were subsequently annealed in N2 ambiance from 600–900 °C. This work reports that the electrical, optical, structural, and morphological properties of CuCrO2 thin films are significantly affected due to the variation in the annealing temperature. XRD analysis confirms the presence of single-phase CuCrO2 in the films annealed at 650 °C. The presence of Cu in the 1+ oxidation state in the phase pure CuCrO2 thin films was confirmed through XPS analysis. Further, through XPS analysis, the oxidation states of Cu and Cr, the full-width half maximum (FWHM), the peak positions, and their respective binding energies have been elucidated. SEM analysis confirms the promotion of nanocrystalline growth in the thin films as the annealing temperature was increased from 600 °C. The average grain size increased from 40.22 nm to 105.31 nm as the annealing temperature was increased from 600 to 900 °C. Optical studies conducted in the wavelength range of 200 nm to 800 nm revealed a decrease in the optical transmission and optical bandgap with an increase in the annealing temperature. The highest optical transmission of ~81% and an optical bandgap of 3.21 eV were obtained for the films depicting the delafossite nature of CuCrO2. The optical bandgap was found to vary between 3.16 eV and 3.74 eV for the films studied in this research. The lowest resistivity of 0.652 Ω cm was obtained for the films annealed at 650 °C. Transparent heterojunction diodes involving p-type delafossite copper chromium oxide (CuCrO2) and n-type indium tin oxide (ITO) were fabricated. The best diode depicted a cut-in voltage of 0.85 V, a very low leakage current of 1.24 x 10-8, an ideality factor of 4.13, and a rectification ratio of 2375.

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Section: Resultssupporting

confidence: 89%

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

2023

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“…This confirms the presence of Cu in the 2+ valence state and the presence of Cu 2 In 2 O 5 phase of copper indium oxide in the film. Similar peak positions corresponding to the Cu 2 In 2 O 5 phase have been reported previously [56][57][58].…”

supporting

confidence: 88%

“…The optical bandgap of Cu 2 In 2 O 5 has been previously reported to be 3.46 eV. 56 The decreasing trend in the optical band gap with an increase in the copper sputtering power can be attributed to the increase in the particle size as confirmed through the FESEM images. 68 This explanation is also supported by the results obtained through the XRD analysis of the films in this work.…”

Section: Film Characterizationmentioning

confidence: 65%

“…Similar peak positions of Cu 2p 3/2 , Cu 2p 1/2 , and their respective satellite peak positions were obtained previously. 56 Through XPS analysis of the two films, it was established that 0.3 eV downshift of the main peaks of Cu-2p doublet and the absence of satellite peaks confirm the presence of Cu in the 1+ oxidation state in Cu-5 W film. Furthermore, it also confirms the presence of the CuInO 2 phase of copper indium oxide in this film.…”

Section: Film Characterizationmentioning

confidence: 92%

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Synthesis and Characterization of Radio-Frequency-Sputtered Delafossite Copper Indium Oxide (CuInO₂) Thin Films

Sundaresh

Bharat

Sundaram

2023

ECS J. Solid State Sci. Technol.

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The deposition of CuInO2 films was achieved for the first time through a dual target RF magnetron sputtering technique using Cu and In2O3 targets. It is found that the sputtering power of the Cu target has a significant effect on the structural, morphological, and optical characteristics of the films. The sputtering power of Cu was varied from 5 to 50 W while the sputtering power of In2O3 was held constant at 50 W. From the X-ray diffraction analysis, it was confirmed that pure-phase CuInO2 was obtained at a Cu sputtering power of 5 W. X-ray photoelectron spectroscopy analysis revealed that Cu exists in the oxidation state of 1+ in the films sputtered with 5 W Cu, further confirming the successful synthesis of single-phase CuInO2. Nanocrystalline growth was confirmed through scanning electron microscopy performed on all post-deposition annealed films. Further, it was observed that grain size increased from 18.49 to 63.34 nm as Cu sputtering power is increased from 5 to 50 W. The optical studies were performed on the post-deposition annealed films in the 300 to 800 nm wavelength range. The optical transmission and the optical bandgap were found to decrease with increase in the Cu sputtering power.

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“…In the Cu-2p core level spectrum, the Cu-doublet comprising Cu 2p 1/2 and Cu 2p 3/2 are classified as the main peaks of Cu. Apart from the main peaks, in the case of Cu 2+ species, satellite peaks (shake-up satellite features) corresponding to the main peaks are observed at a higher energy level than the main peaks [44]. The absence of satellite peaks in the case of Cu 1+ species is its distinguishing feature [43,[45][46][47].…”

Section: Xps Analysismentioning

confidence: 95%

Effect of Cu2O Sputtering Power Variation on the Characteristics of Radio Frequency Sputtered p-Type Delafossite CuCrO2 Thin Films

2023

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For the first time, the effect of Cuprous Oxide (Cu2O) sputtering power variation on the radio frequency sputtered Copper Chromium Oxide (CuCrO2) thin films was studied. In this work, the sputtering power of Cr2O3 was held constant at 200 W while the sputtering power of the Cu2O target was varied from 10 to 100 W. The films were subsequently annealed at 650 °C in N2 ambiance. The effects of Cu2O sputtering power variation on the structural, optical, and electrical properties of the films have been reported in this work. X-ray diffractometer (XRD) study revealed that the single-phase delafossite structure of CuCrO2 was only obtained at Cu2O sputtering power of 50 W. X-ray photoelectron spectroscopy (XPS) analysis further established the results of XRD study where Cu in 1+ oxidation state was identified in thin films obtained at 50 W of Cu2O sputtering power. The optical studies were conducted in this work on all the post-deposition annealed films in the wavelength range of 200–800 nm. The energy dispersive x-ray spectroscopy (EDS) study revealed a near stoichiometric composition ratio of 1:1.06 of Cu:Cr at% obtained in the films sputtered with 50 W of Cu2O sputtering power. The highest optical transmission of ~81% and the highest optical bandgap of 3.21 eV were observed for single-phase CuCrO2 thin films. The optical transmission and the optical bandgap were found to decrease with an increase in the Cu2O sputtering power. The electrical study performed on all the post-deposition annealed films revealed that the lowest resistivity of 0.652 Ω-cm was identified for single-phase CuCrO2 thin films obtained at 50 W of Cu2O sputtering power.

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Investigation on the Intermixing of Cu and In Layers for the Formation of Cu₂In₂O₅ Thin Films

Cited by 7 publications

References 42 publications

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

Synthesis and Characterization of Radio-Frequency-Sputtered Delafossite Copper Indium Oxide (CuInO₂) Thin Films

Effect of Cu2O Sputtering Power Variation on the Characteristics of Radio Frequency Sputtered p-Type Delafossite CuCrO2 Thin Films

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Investigation on the Intermixing of Cu and In Layers for the Formation of Cu2In2O5 Thin Films

Cited by 7 publications

References 42 publications

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

Effect of Annealing Temperature on Radio Frequency Sputtered p-Type Delafossite Copper Chromium Oxide (CuCrO2) Thin Films and Investigation of Diode Characteristics Forming Transparent pn-Heterojunction

Synthesis and Characterization of Radio-Frequency-Sputtered Delafossite Copper Indium Oxide (CuInO2) Thin Films

Effect of Cu2O Sputtering Power Variation on the Characteristics of Radio Frequency Sputtered p-Type Delafossite CuCrO2 Thin Films

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Investigation on the Intermixing of Cu and In Layers for the Formation of Cu₂In₂O₅ Thin Films

Synthesis and Characterization of Radio-Frequency-Sputtered Delafossite Copper Indium Oxide (CuInO₂) Thin Films